Product Information

IPD50R2K0CEAUMA1

IPD50R2K0CEAUMA1 electronic component of Infineon

Datasheet
MOSFET CONSUMER

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2158 ea
Line Total: USD 539.5

2425 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.2158
5000 : USD 0.2111
10000 : USD 0.2066
12500 : USD 0.2064
25000 : USD 0.2023

58 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 37
Multiples : 1
37 : USD 0.2133

2425 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 107
Multiples : 1
107 : USD 0.3709
200 : USD 0.3693
500 : USD 0.3124
1000 : USD 0.3041

     
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RoHS - XON
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Vds - Drain-Source Breakdown Voltage
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Cnhts
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IPD50R2K0CE, IPU50R2K0CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and Drain offering the best cost down performance ratio available on the market. Pin 2 Gate Features Pin 1 Extremely low losses due to very low FOM Rdson*Qg and Eoss Source Very high commutation ruggedness Pin 3 Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for standard grade applications Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 2 DS(on),max I 3.6 A D Q 6 nC g.typ I 6.1 A D,pulse Eoss 400V 0.62 J Type / Ordering Code Package Marking Related Links IPD50R2K0CE PG-TO 252 50S2K0CE see Appendix A IPU50R2K0CE PG-TO 251 Final Data Sheet 1 Rev. 2.3, 2016-06-13500V CoolMOS CE Power Transistor IPD50R2K0CE, IPU50R2K0CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.3, 2016-06-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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