IPC100N04S5-1R9 OptiMOS -5 Power-Transistor Product Summary V 40 V DS R 1.9 mW DS(on),max I 100 A D Features PG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow 1 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPC100N04S5-1R9 PG-TDSON-8-34 5N041R9 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 100 A Continuous drain current D C GS 2) 100 T =100C, V =10V C GS 2) I T =25C 400 Pulsed drain current D,pulse C 2) E I =50A 130 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 100 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 100 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.2 page 1 2016-12-06 IPC100N04S5-1R9 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.5 K/W thJC Thermal resistance, junction - 2 3) R - - 50 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 40 - - V (BR)DSS GS D V V =V , I =50A Gate threshold voltage 2.2 2.8 3.4 GS(th) DS GS D V =40V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 100 2) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =7V, I =50A Drain-source on-state resistance - 1.9 2.3 mW DS(on) GS D V =10V, I =50A - 1.6 1.9 GS D Rev. 1.2 page 2 2016-12-06