IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 SIPMOS ==Power-Transistor == Product Summary Feature V 100 V DS N-Channel R 33 m DS(on) Enhancement mode I 47 A D 175C operating temperature P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking IPP47N10S-33 PG-TO220-3-1 SP0002-25706 N1033 IPB47N10S-33 PG-TO263-3-2 SP0002-25702 N1033 IPI47N10S-33 PG-TO262-3-1 SP0002-25703 N1033 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D T =25C 47 C T =100C 33 C 188 Pulsed drain current I D puls T =25C C 400 mJ Avalanche energy, single pulse E AS I =47 A , V =25V, R =25 D DD GS E 17.5 Avalanche energy, periodic limited by T AR jmax Reverse diode dv/dt dv/dt 6 kV/s I =47A, V =0V, di/dt=200A/s S DS Gate source voltage V V 20 GS Power dissipation P 175 W tot T =25C C Operating and storage temperature T , T -55... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Page 1 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics R - - 0.85 K/W Thermal resistance, junction - case thJC R - - 62 Thermal resistance, junction - ambient, leaded thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 1) 6 cm cooling area - - 40 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics V 100 - - V Drain-source breakdown voltage (BR)DSS V =0V, I =2mA GS D 2.1 3 4 Gate threshold voltage, V = V V GS DS GS(th) I = 2 mA D A Zero gate voltage drain current I DSS V =100V, V =0V, T =25C - 0.1 1 DS GS j V =100V, V =0V, T =150C - - 100 DS GS j - 10 100 nA Gate-source leakage current I GSS V =20V, V =0V GS DS - 25 33 Drain-source on-state resistance R m DS(on) V =10V, I =33A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-02-14