IPB180N03S4L-H0 OptiMOS-T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N03LH0 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) Continuous drain current I 180 A T =25C, V =10V D C GS T =100 C, C 180 2) V =10 V GS 2) I T =25 C 720 Pulsed drain current D,pulse C 2) E I =90 A 980 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 180 A AS V Gate source voltage - 16 V GS P T =25 C Power dissipation 250 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-12-03 IPB180N03S4L-H0 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =200 A Gate threshold voltage 1 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j I V =16 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =4.5 V, I =90 A Drain-source on-state resistance - 0.95 1.30 m DS(on) GS D Drain-source on-state resistance R V =10 V, I =100 A - 0.73 0.95 m DS(on) GS D Rev. 1.0 page 2 2009-12-03