Type IPP034N03L G IPB034N03L G % & 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D 1) Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP034N03L G IPB034N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 034N03L 034N03L Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25 C 80 A D GS C V =10 V, T =100 C 80 GS C V =4.5 V, T =25 C 80 GS C V =4.5 V, GS 77 T =100 C C 2) I T =25 C 400 Pulsed drain current D,pulse C 3) I T =25 C 80 Avalanche current, single pulse AS C E Avalanche energy, single pulse I =80 A, R =25 W 70 mJ AS D GS I =80 A, V =24 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =175 C j,max Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 2.0 page 1 2010-02-19IPP034N03L G IPB034N03L G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Power dissipation P T =25 C 94 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 4) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 30 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 1 - 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS 5) Drain-source on-state resistance R V =4.5 V, I =30 A - 3.8 4.7 mW DS(on) GS D V =10 V, I =30 A - 2.8 3.4 GS D Gate resistance R - 1.6 - W G V >2 I R , DS D DS(on)max g Transconductance 50 100 - S fs I =30 A D 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 2.0 page 2 2010-02-19