Product Information

IPA60R650CEXKSA1

IPA60R650CEXKSA1 electronic component of Infineon

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1374 ea
Line Total: USD 1.14

225 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8786
10 : USD 0.8093
30 : USD 0.7658
100 : USD 0.7218
500 : USD 0.6683
1000 : USD 0.6599

225 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1374
10 : USD 0.874
100 : USD 0.7176
500 : USD 0.552
1000 : USD 0.5232
2500 : USD 0.5232
5000 : USD 0.5232
10000 : USD 0.5037
25000 : USD 0.5026

94 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.703
3 : USD 1.404
10 : USD 1.222
16 : USD 1.053
43 : USD 1.001

6305 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 500
Multiples : 500
500 : USD 0.7028

7760 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 38
Multiples : 1
38 : USD 1.1236
50 : USD 1.021
100 : USD 0.8363
200 : USD 0.7826
500 : USD 0.7795
1000 : USD 0.6928
2000 : USD 0.6539

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
On-State Resistance
Drain Current
Gate-Source Voltage
Drain-Source Voltage
Power Dissipation
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IPD60R650CE, IPA60R650CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and Drain offering the best cost down performance ratio available on the market. Pin 2, Tab Gate Features Pin 1 Extremely low losses due to very low FOM Rdson*Qg and Eoss Source Very high commutation ruggedness Pin 3 Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for standard grade applications Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: Note1: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Note2: *6R650CE is Full PAK marking only Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 650 m DS(on),max Id. 9.9 A Q 20.5 nC g.typ I 19 A D,pulse E 400V 1.9 J oss Type / Ordering Code Package Marking Related Links IPD60R650CE PG-TO 252 60S650CE / 6R650CE* see Appendix A IPA60R650CE PG-TO 220 FullPAK Final Data Sheet 1 Rev. 2.3 , 2018 -04 -10600V CoolMOS CE Power Transistor IPD60R650CE, IPA60R650CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 15 Revision History 16 Trademarks . 16 Disclaimer 16 Final Data Sheet 2 Rev.2.3, 20180410

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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