Product Information

IMW65R072M1HXKSA1

IMW65R072M1HXKSA1 electronic component of Infineon

Datasheet
MOSFET SILICON CARBIDE MOSFET

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.614 ea
Line Total: USD 9.61

367 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3259 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 30
Multiples : 30
30 : USD 6.9798

367 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 9.614
10 : USD 8.395
25 : USD 7.475
100 : USD 6.9805
240 : USD 6.831
480 : USD 6.0145
2640 : USD 5.8995
5040 : USD 5.773

24 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 19.864
2 : USD 13.728
3 : USD 13.715
4 : USD 12.974

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Hts Code
LoadingGif

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IMW65R072M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. 1 2 3 Features Optimized switching behavior at higher currents Commutation robust fast body diode with low Q rr Superior gate oxide reliability Best thermal conductivity and behavior Drain Lower R and pulse current dependency on temperature DS(on) Pin 2, Tab Increased avalanche capability Compatible with standard drivers (recommended driving voltage: 18V) *1 Gate Pin 1 Benefits Source *1: Internal body diode Pin 3 Unique combination of high performance, high reliability and ease of use Ease of use and integration Suitable for topologies with continuous hard commutation Higher robustness and system reliability Efficiency improvement Reduced system size leading to higher power density Potential applications SMPS UPS (uninterruptable power supplies) Solar PV inverters EV charging infrastructure Energy storage and battery formation Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit V T = 25 C 650 V DS J R 72 m DS(on),typ Q 22 nC G,typ I 69 A D,pulse Q 400 V 52 nC oss E oss 400 V 7.8 J Type / Ordering Code Package Marking Related Links IMW65R072M1H PG-TO 247-3 65R072M1 see Appendix A Final Data Sheet 1 Rev. 2.0, 2019-12-16650 V CoolSiC M1 SiC Trench Power Device IMW65R072M1H Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 14 Revision History 15 Trademarks . 15 Disclaimer 15 Final Data Sheet 2 Rev. 2.0, 2019-12-16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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