Product Information

HFA35HB60C

HFA35HB60C electronic component of Infineon

Datasheet
Diode Switching 600V 30A 3-Pin(3+Tab) TO-254AA

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 326.6182 ea
Line Total: USD 326.62

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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HFA35HB60C
Infineon

1 : USD 326.6182

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current Max
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
Avg Forward Curr Max
Peak Non-Repetitive Surge Current
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PD-20378C HFA35HB60C FRED Ultrafast, Soft Recovery Diode  V = 600V R Reduced RFI and EMI Reduced Snubbing V = 1.9V F Extensive Characterization of Recovery Parameters Hermetic Q = 270nC rr Electrically Isolated Ceramic Eyelets di(rec)M/dt = 345A/s ESD Rating: Class 3B per MIL-STD-750, Method 1020    These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.     Parameter Max. Units V Cathode to Anode Voltage (Per Leg) 600 V R I Continuous Forward Current,  T =100 C 30 F(AV) C  I Single Pulse Forward Current,  T = 25C (Per Leg) 150 FSM C P @ T = 25C Maximum Power Dissipation 63 W D C T T Operating Junction and Storage Temperature Range -55 to +150 C J, STG                CASE STYLE (ISOLATED BASE) ANODE COMMON ANODE CATHODE TO-254AA www.irf.com 1  HFA35HB60C Electrical Characteristics (Per Leg)@ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions V Cathode Anode Breakdown Voltage 600 V I = 250A R BR V Forward Voltage 1.7 I = 15A, T = -55C F F J See Fig. 1 1.9 I = 15A, T = 25C F J V !#  2.3 I = 30A, T = 25C F J 2.1 I = 15A, T = 125C F J I Reverse Leakage Current 10 A V = V Rated R R R See Fig. 2 1.0 mA V = 480V, T = 125C R J C Junction Capacitance, See Fig. 3 24 36 pF V = 200V T R L Series Inductance 8.7 nH Measured from anode lead to cathode S lead, 6mm ( 0.025 in. ) from package Dynamic Recovery Characteristics (Per Leg) @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions t Reverse Recovery Time 54 88 ns T = 25C See Fig. rr1 J t 94 140 T = 125C 5 I = 15A rr2 J F I Peak Recovery Current 5.6 7.8 T = 25C See Fig. RRM1 J  I 7.8 11.7 T = 125C 6 V = 200V RRM2 J R Q Reverse Recovery Charge 180 270 T = 25C See Fig. rr1 J  Q 435 650 T = 125C 7 di /dt = 200A/s rr2 J f di /dt1 Peak Rate of Fall of Recovery Current 300 345 T = 25C See Fig. (rec)M J   di /dt2 During t 190 285 T = 125C 8 (rec)M b J Thermal - Mechanical Characteristics Parameter Typ. Max. Units R Junction-to-Case, Single Leg Conducting 2.0 C/W thJC Wt Weight 9.3 g 2 www.irf.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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