Technische Information / Technical Information IGBT-Module FZ1200R12KL4C IGBT-modules 1200V IGBT Modul mit low loss IGBT der 2.ten Generation und softer Emitter Controlled Diode 1200V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = 25C 1200 V V CES Collector-emitter voltage T = 125C 1200 vj Kollektor-Dauergleichstrom T = 80C, T = 150C I 1200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 1900 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 2400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 7,80 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 1200 A, V = 15 V T = 25C 2,10 2,60 V C GE vj V CE sat Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C 2,40 2,90 V C GE vj Gate-Schwellenspannung IC = 48,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 13,0 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 90,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 7,00 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1200 A, VCE = 600 V Tvj = 25C 0,54 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,57 s GE vj RGon = 0,82 Anstiegszeit, induktive Last IC = 1200 A, VCE = 600 V Tvj = 25C 0,18 s t r Rise time, inductive load V = 15 V T = 125C 0,18 s GE vj RGon = 0,82 Abschaltverzgerungszeit, induktive Last IC = 1200 A, VCE = 600 V Tvj = 25C 1,05 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,15 s GE vj RGoff = 0,82 Fallzeit, induktive Last IC = 1200 A, VCE = 600 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,14 s GE vj RGoff = 0,82 Einschaltverlustenergie pro Puls IC = 1200 A, VCE = 600 V, LS = 70 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 165 mJ GE vj on RGon = 0,82 Abschaltverlustenergie pro Puls IC = 1200 A, VCE = 600 V, LS = 70 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 195 mJ GE vj off RGoff = 0,82 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 9000 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 16,0 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 9,00 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: DTS date of publication: 2013-10-02 approved by: TS revision: 3.1 1Technische Information / Technical Information IGBT-Module FZ1200R12KL4C IGBT-modules Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = 25C 1200 V V RRM Repetitive peak reverse voltage T = 125C 1200 vj Dauergleichstrom I 1200 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 2400 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 300 kAs R P vj It - value Mindesteinschaltdauer ton min 10,0 s Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 1200 A, V = 0 V T = 25C 1,80 2,30 V F GE vj V F Forward voltage I = 1200 A, V = 0 V T = 125C 1,70 2,20 V F GE vj Rckstromspitze I = 1200 A, - di /dt = 6800 A/s (T =125C) T = 25C 740 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 980 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 1200 A, - di /dt = 6800 A/s (T =125C) T = 25C 105 C F F vj vj Recovered charge V = 600 V T = 125C Q 215 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 1200 A, - di /dt = 6800 A/s (T =125C) T = 25C 45,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 80,0 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 32,0 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 18,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions prepared by: DTS date of publication: 2013-10-02 approved by: TS revision: 3.1 2