DF100R07W1H5FP B53 EasyPACK Modul mit TRENCHSTOP 5 H5 und CoolSiC Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EasyPACK module with TRENCHSTOP 5 H5 and CoolSiC diode and PressFIT / pre-applied Thermal Interface Material J V = 650V CES I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features CoolSiC (TM) Schottky Diode Gen 5 CoolSiC (TM) Schottky diode gen 5 Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability up to 650V Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-04-06DF100R07W1H5FP B53 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom ICN 50 A Implemented collector current Kollektor-Dauergleichstrom TH = 100C, Tvj max = 175C IC nom 25 A Continuous DC collector current T = 25C, T = 175C I 40 A H vj max C Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 100 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 25 A, V = 15 V T = 25C 1,35 1,55 V C GE vj Collector-emitter saturation voltage IC = 25 A, VGE = 15 V Tvj = 125C VCE sat 1,40 V I = 25 A, V = 15 V T = 150C 1,45 V C GE vj Gate-Schwellenspannung I = 0,50 mA, V = V , T = 25C V 3,25 4,00 4,75 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V, VCE = 400V QG 0,235 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,80 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,013 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 0,04 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 25 A, V = 400 V T = 25C 0,009 s C CE vj td on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,01 s R = 5,1 T = 150C 0,012 s Gon vj Anstiegszeit, induktive Last I = 25 A, V = 400 V T = 25C 0,0036 s C CE vj tr Rise time, inductive load V = 15 V T = 125C 0,004 s GE vj R = 5,1 T = 150C 0,005 s Gon vj Abschaltverzgerungszeit, induktive Last I = 25 A, V = 400 V T = 25C 0,008 s C CE vj td off Turn-off delay time, inductive load V = 15 V T = 125C 0,009 s GE vj R = 5,1 T = 150C 0,01 s Goff vj Fallzeit, induktive Last I = 25 A, V = 400 V T = 25C 0,022 s C CE vj tf Fall time, inductive load V = 15 V T = 125C 0,028 s GE vj R = 5,1 T = 150C 0,03 s Goff vj Einschaltverlustenergie pro Puls I = 25 A, V = 400 V, L = 25 nH T = 25C 0,11 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 4200 A/s (T = 150C) T = 125C E 0,23 mJ GE vj vj on R = 5,1 T = 150C 0,25 mJ Gon vj Abschaltverlustenergie pro Puls I = 25 A, V = 400 V, L = 25 nH T = 25C 0,15 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 7500 V/s (T = 150C)T = 125C E 0,17 mJ GE vj vj off R = 5,1 T = 150C 0,21 mJ Goff vj Kurzschluverhalten V 15 V, V = 400 V GE CC ISC SC data V = V -L di/dt t 0 s, T = 150C 250 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 1,60 K/W thJH Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2017-04-06