Product Information

CY15B102Q-SXE

CY15B102Q-SXE electronic component of Infineon

Datasheet
F-RAM F-RAM Memory Serial

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 19.5253 ea
Line Total: USD 19.53

4332 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2129 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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CY15B102Q-SXE
Infineon

1 : USD 17.9064
10 : USD 17.0126
25 : USD 16.8866
100 : USD 16.5489
250 : USD 16.5489
500 : USD 16.5489

4332 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

CY15B102Q-SXE
Infineon

1 : USD 19.5253
10 : USD 18.3781
25 : USD 16.3978
100 : USD 16.0598
250 : USD 15.4198
500 : USD 15.3232
940 : USD 15.2266
2820 : USD 15.2266
5640 : USD 15.2266

2735 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 940
Multiples : 940

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CY15B102Q-SXE
Infineon

940 : USD 22.7656

2129 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

CY15B102Q-SXE
Infineon

1 : USD 17.9064
10 : USD 16.8499
25 : USD 16.8236
100 : USD 16.4871

263 - WHS 5


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

CY15B102Q-SXE
Infineon

1 : USD 17.6354
10 : USD 16.7254
25 : USD 16.6987
100 : USD 16.3646

508 - WHS 6


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2
Multiples : 1

Stock Image

CY15B102Q-SXE
Infineon

2 : USD 24.5522
5 : USD 21.3094
10 : USD 20.3829
50 : USD 18.5299
100 : USD 18.0075

     
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CY15B102Q 2-Mbit (256 K 8) Serial (SPI) Automotive F-RAM 2-Mbit (256 K 8) Serial (SPI) Automotive F-RAM Features Functional Overview 2-Mbit ferroelectric random access memory (F-RAM) logically The CY15B102Q is a 2-Mbit nonvolatile memory employing an organized as 256 K 8 advanced ferroelectric process. F-RAM is nonvolatile and 13 High-endurance 10 trillion (10 ) read/writes performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, 121-year data retention (See the Data Retention and Endurance table) overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. NoDelay writes Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15B102Q performs write operations at bus speed. No write delays are incurred. Data Very fast serial peripheral interface (SPI) is written to the memory array immediately after each byte is Up to 25 MHz frequency successfully transferred to the device. The next bus cycle can Direct hardware replacement for serial flash and EEPROM commence without the need for data polling. In addition, the Supports SPI mode 0 (0, 0) and mode 3 (1, 1) product offers substantial write endurance compared with other Sophisticated write protection scheme nonvolatile memories. The CY15B102Q is capable of supporting 13 Hardware protection using the Write Protect (WP) pin 10 read/write cycles, or 10 million times more write cycles than EEPROM. Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array These capabilities make the CY15B102Q ideal for nonvolatile memory applications requiring frequent or rapid writes. Device ID Examples range from data collection, where the number of write Manufacturer ID and Product ID cycles may be critical, to demanding industrial controls where the Low power consumption long write time of serial flash or EEPROM can cause data loss. 5 mA active current at 25 MHz The CY15B102Q provides substantial benefits to users of serial 750 A standby current EEPROM or flash as a hardware drop-in replacement. The 20 A sleep mode current CY15B102Q uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device Low-voltage operation: V = 2.0 V to 3.6 V DD incorporates a read-only Device ID that allows the host to Automotive-E temperature: 40 C to +125 C determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an 8-pin small outline integrated circuit (SOIC) package Automotive-E temperature range of 40 C to +125 C. AEC Q100 Grade 1 compliant Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 256 K x 8 F-RAM Array Instruction Register 18 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-89166 Rev. *F Revised April 20, 2017CY15B102Q Contents Pinout ................................................................................ 3 DC Electrical Characteristics ........................................ 12 Pin Definitions .................................................................. 3 Data Retention and Endurance ..................................... 13 Overview............................................................................ 4 Example of an F-RAM Life Time in an Memory Architecture........................................................ 4 AEC-Q100 Automotive Application............................... 13 Serial Peripheral Interface - SPI Bus .............................. 4 Capacitance .................................................................... 13 SPI Overview............................................................... 4 Thermal Resistance........................................................ 13 SPI Modes................................................................... 5 AC Test Conditions ........................................................ 13 Power Up to First Access............................................ 6 AC Switching Characteristics ....................................... 14 Command Structure .................................................... 6 Power Cycle Timing ....................................................... 16 WREN - Set Write Enable Latch ................................. 6 Ordering Information...................................................... 17 WRDI - Reset Write Enable Latch............................... 6 Ordering Code Definitions......................................... 17 Status Register and Write Protection ............................. 7 Package Diagrams.......................................................... 18 RDSR - Read Status Register..................................... 7 Acronyms........................................................................ 19 WRSR - Write Status Register .................................... 7 Document Conventions ................................................. 19 Memory Operation............................................................ 8 Units of Measure ....................................................... 19 Write Operation ........................................................... 8 Document History Page................................................. 20 Read Operation ........................................................... 8 Sales, Solutions, and Legal Information ...................... 22 Fast Read Operation ................................................... 8 Worldwide Sales and Design Support....................... 22 HOLD Pin Operation ................................................. 10 Products .................................................................... 22 Sleep Mode ............................................................... 10 PSoC Solutions ...................................................... 22 Device ID................................................................... 11 Cypress Developer Community................................. 22 Endurance ................................................................. 11 Technical Support ..................................................... 22 Maximum Ratings........................................................... 12 Operating Range............................................................. 12 Document Number: 001-89166 Rev. *F Page 2 of 22

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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