Product Information

BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1 electronic component of Infineon

Datasheet
Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8453 ea
Line Total: USD 0.85

4260 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - WHS 1


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.9064
10 : USD 0.7946
30 : USD 0.7258
100 : USD 0.6541
500 : USD 0.6221
1000 : USD 0.6085

4260 - WHS 2


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.8453
10 : USD 0.6693
100 : USD 0.5555
500 : USD 0.4772
1000 : USD 0.3784
5000 : USD 0.368
10000 : USD 0.3565
25000 : USD 0.3531

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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BSZ086P03NS3E G TM OptiMOS P3 Power-Transistor Product Summary Features V -30 V DS single P-Channel in S3O8 R 8.6 m DS(on),max 1) Qualified according JEDEC for target applications I -40 A D 150 C operating temperature PG-TSDSON-8 V =25 V, specially suited for notebook applications GS Pb-free RoHS compliant ESD protected applications: battery management, load switching Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free Packing BSZ086P03NS3E G PG-TSDSON-8 Yes 086P3NE Yes non-dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current -40 A D C T =70 C -40 C 2) -13.5 T =25 C A 3) Pulsed drain current I -160 D,pulse T =25 C C E 105 Avalanche energy, single pulse I =-20 A, R =25 mJ AS D GS V 25 Gate source voltage V GS Power dissipation P T =25 C 69 W tot A 2) 2.1 T =25 C A T , T -55 150 Operating and storage temperature C j stg ESD class JESD22-A114 HBM 3 (>= 4 kV) Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 1) J-STD20 and JESD22 Rev. 2.03Rev. 2.03 page 1page 1 2012-04-132012-04-13BSZ086P03NS3E G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.8 K/W thJC junction - case Thermal resistance, 2 2) R -- 60 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250A -30 - - V (BR)DSS GS D V V =V , I =-105 A Gate threshold voltage -3.1 -2.5 -1.9 GS(th) DS GS D V =-30 V, V =0 V, DS GS Zero gate voltage drain current I - - -1 A DSS T =25 C j V =-30 V, ,V =0 V, , DSDS GSGS - - -1010 T =125 C j Gate-source leakage current I V =-25 V, V =0 V - - -10 A GSS GS DS Drain-source on-state resistance R V =-6 V, I =-20 A - 8.7 13.4 m DS(on) GS D V =-10 V, I =-20 A - 6.5 8.6 GS D R Gate resistance - 2.2 - G V >2 I R , DS D DS(on)max g Transconductance 30 43 - S fs I =-20 A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 for more detailed information Rev. 2.03Rev. 2.03 page 2page 2 2012-04-132012-04-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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