Product Information

BSS159NH6327XTSA2

BSS159NH6327XTSA2 electronic component of Infineon

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2599 ea
Line Total: USD 1.3

5499 - Global Stock
Ships to you between
Mon. 20 May to Thu. 23 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
26 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.1696
10 : USD 0.1696
25 : USD 0.1696

11640 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1506
9000 : USD 0.1476
24000 : USD 0.1476
45000 : USD 0.1476

133860 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1365
6000 : USD 0.1365
9000 : USD 0.1365
12000 : USD 0.1365
15000 : USD 0.1365

5499 - WHS 4


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 5
Multiples : 5
5 : USD 0.2599
50 : USD 0.2066
150 : USD 0.1836
500 : USD 0.1551
3000 : USD 0.1424
6000 : USD 0.1348

11683 - WHS 5


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.4082
10 : USD 0.3231
100 : USD 0.2484
500 : USD 0.207
1000 : USD 0.176
3000 : USD 0.153
9000 : USD 0.1518
24000 : USD 0.1484
45000 : USD 0.1449

2580 - WHS 6


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 5
5 : USD 0.3874
25 : USD 0.3341
70 : USD 0.2327
195 : USD 0.2197
3000 : USD 0.2158

17363 - WHS 7


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 191
Multiples : 1
191 : USD 0.1945

1610 - WHS 8


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 319
Multiples : 1
319 : USD 0.2811

11640 - WHS 9


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1506
9000 : USD 0.1476

84390 - WHS 10


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1439
9000 : USD 0.141

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
LoadingGif

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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Qualified according to AEC Q101 PG-SOT-23 100% lead-free Halogen-free RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159NBSS159N PPGG-S-SOTOT-2-233 YeYess YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in SGSGss 1)1) VV bandsbands GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.23 A D A T =70 C 0.18 A I T =25 C Pulsed drain current 0.92 D,pulse A I =0.23 A, V =60 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114 -HBM 0(<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29BSS159N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R minimal footprint - - 350 K/W Thermal characteristics thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-10 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =3 V, I =26 A Gate threshold voltage -3.5 -2.8 -2.4 GS(th) DS D V =60 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10 V, T =25 C GS j V =60 V, DS -- 10 V =-10 V, T =125 C GS j II VV =20 V, 20 V VV =0 V0V GtGate-source leakage currentl k t - - 1010 nAA GSS GS DS I V =0 V, V =10 V On-state drain current 130 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =0.07 A - 3.9 8 DS(on) GS D V =10 V, I =0.16 A - 1.7 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.19 - S fs I =0.16 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =26 A J -2.6 - -2.4 V GS(th) DS D K -2.75--2.55 L -2.9--2.7 M -3.05--2.85 N -3.2--3 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2Rev. 2.2 page 2page 2 2009-07-292009-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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