BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V -30 V DS single P-Channel in SO8 R V =-10 V 8.0 mW DS(on),max GS 1) Qualified according JEDEC for target applications V =-6 V 11.4 GS 150C operating temperature I -14.8 A D V =25 V, specially suited for notebook applications GS Pb-free plating RoHS compliant PG-DSO-8 applications: battery management, load switching Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free Packing Yes BSO080P03NS3 G PG-DSO-8 080P3NS Yes non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 1) I V =-10 V, T =25 C -14.8 -12 A GS A Continuous drain current D V =-10 V, T =70 C -11.8 -9.4 GS A V =-6 V, T =25 C -12.4 -9.8 GS A V =-6 V, T =70 C GS A -9.9 -7.8 2) I T =25 C -48 Pulsed drain current D,pulse A E I =-14.8 A, R =25 W 149 Avalanche energy, single pulse mJ AS D GS Gate source voltage V 25 V GS 1) P T =25 C 2.5 1.6 W Power dissipation tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-A114 HBM 1C (1 kV - 2 kV) Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 ReRevv.. 22.2.211 ppaaggee 11 22001111--1111--0022BSO080P03NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point Thermal resistance, minimal footprint, R - - 110 thJA t 10 s junction - ambient p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , - - 50 t 10 s p 2 1) 6 cm cooling area , - - 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j SSttaatticic cchhaarraacctteerrisistticicss Drain-source breakdown voltage V V =0 V, I =-0.25 mA -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-150 A -3.1 -2.5 -1.9 GS(th) DS GS D V =-30 V, V =0 V, DS GS I Zero gate voltage drain current - - -1 A DSS T =25 C j V =-30 V, V =0 V, DS GS - - -100 T =125 C j V =-25 V, V =0 V Gate-source leakage current I - - -100 nA GS DS GSS V =-6 V, I =-12.4 A Drain-source on-state resistance R - 8.1 11.0 mW DS(on) GS D V =-10 V, I =-14.8 A GS D - 6.7 8.0 R Gate resistance - 5.9 - W G V >2 I R , DS D DS(on)max Transconductance g 22 44 - S fs I =-14.8 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information ReRevv.. 22.2.211 ppaaggee 22 22001111--1111--0022