Product Information

BFR92PE6327HTSA1

BFR92PE6327HTSA1 electronic component of Infineon

Datasheet
Infineon Technologies RF Bipolar Transistors TRANS GP BJT NPN 15V 0.045A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3692 ea
Line Total: USD 0.37

34423 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0743
9000 : USD 0.0716
24000 : USD 0.0702
45000 : USD 0.0702
99000 : USD 0.0702

2233 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.1435
10 : USD 0.1419
25 : USD 0.1404
100 : USD 0.0959
250 : USD 0.094
500 : USD 0.094
1000 : USD 0.094

20370 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0746
9000 : USD 0.0746
15000 : USD 0.0746
30000 : USD 0.0746
60000 : USD 0.0746

34423 - WHS 4


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.3692
10 : USD 0.2208
100 : USD 0.1127
1000 : USD 0.0932
3000 : USD 0.0816
9000 : USD 0.0748
24000 : USD 0.0713
45000 : USD 0.069
99000 : USD 0.0655

1882 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 282
Multiples : 1
282 : USD 0.1357
500 : USD 0.1144

11640 - WHS 6


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0743
9000 : USD 0.0716
24000 : USD 0.0702

2233 - WHS 7


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 101
Multiples : 1
101 : USD 0.0959
250 : USD 0.094

41921 - WHS 8


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 300
Multiples : 1
300 : USD 0.1279
500 : USD 0.1089
1000 : USD 0.1039
2000 : USD 0.0962
9000 : USD 0.0908
18000 : USD 0.0833

32010 - WHS 9


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0707
9000 : USD 0.0679
24000 : USD 0.0666

8730 - WHS 10


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 9000
Multiples : 9000
9000 : USD 0.0961

     
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Automotive Qualification Standard
Svhc
Associated Gain Ga
Av Current Ic
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Figure Typ
Operating Temperature Range
Smd Marking
Termination Type
Test Frequency
Transistor Case Style
Voltage Vcbo
LoadingGif

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BFR92P Low Noise Silicon Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR92P GFs SOT23 1=B 2=E 3=C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 15 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2.5 Emitter-base voltage V EBO 45 mA Collector current I C 4 Base current I B 1) 280 mW Total power dissipation P tot T 93 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) 205 K/W Junction - soldering point R thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2013-11-21 1BFR92P Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 15 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 10 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 100 A Emitter-base cutoff current I EBO V = 2.5 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 15 mA, V = 8 V, pulse measured C CE 2013-11-21 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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