AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology V 40V New Ultra Low On-Resistance DSS 175C Operating Temperature R typ. 3.2m DS(on) Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax I 100A D (Silicon Limited) Lead-Free, RoHS Compliant I 100A D (Package Limited) Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFETs D utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an S S extremely efficient and reliable device for use in Automotive and a wide variety of D G G other applications. I-Pak D-Pak Applications AUIRFU8401 AUIRFR8401 Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid G D S Heavy Loads Gate Drain Source DC-DC Converter Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU8401 I-Pak Tube 75 AUIRFU8401 Tube 75 AUIRFR8401 AUIRFR8401 D-Pak Tape and Reel Left 3000 AUIRFR8401TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 100 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 71 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 100 D C GS I Pulsed Drain Current 400 DM P T = 25C Maximum Power Dissipation 79 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy (Thermally Limited) 67 AS mJ E (tested) Single Pulse Avalanche Energy (Tested Limited) 94 AS I Avalanche Current See Fig. 14, 15, 24a, 24b A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.9 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA R Junction-to-Ambient 110 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-03 AUIRFR/U8401 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1.0mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 3.2 4.25 m V = 10V, I = 60A DS(on) GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 50A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.0 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Trans conductance 198 S V = 10V, I = 60A DS D Q Total Gate Charge 42 63 I = 60A g D Q Gate-to-Source Charge 12 V = 20V gs DS nC Q Gate-to-Drain Charge 14 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 28 sync g gd t Turn-On Delay Time 7.9 V = 20V d(on) DD t Rise Time 34 = 30A I r D ns t Turn-Off Delay Time 25 R = 2.7 d(off) G V = 10V t Fall Time 24 f GS C Input Capacitance 2200 V = 0V iss GS C Output Capacitance 340 V = 25V oss DS C Reverse Transfer Capacitance 205 pF = 1.0MHz, See Fig. 5 rss C (ER) Effective Output Capacitance (Energy Related) 410 V = 0V, V = 0V to 32V oss eff. GS DS C (TR) Effective Output Capacitance (Time Related) 495 V = 0V, V = 0V to 32V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 100 S (Body Diode) showing the A Pulsed Source Current integral reverse I 400 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 60A,V = 0V SD J S GS dv/dt Peak Diode Recovery dv/dt V/ns 3.2 T = 175C,I = 60A,V = 40V J S DS t Reverse Recovery Time 28 T = 25C rr J V = 34V, ns R 29 T = 125C J I = 60A F Q Reverse Recovery Charge 28 T = 25C rr J di/dt = 100A/s nC 31 T = 125C J I Reverse Recovery Current 1.6 A T = 25C RRM J Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.037mH, R = 50 , I = 60A, V =10V. Jmax , J G AS GS I 60A, di/dt 918A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C . (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff oss DS DSS C . (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J This value determined from sample failure population, starting T = 25C, L=0.037mH, R = 25, I = 60A, V =10V J G AS GS 2 2017-10-03