Product Information

HYG027N04LR1D

HYG027N04LR1D electronic component of HuaYi

Datasheet
TO-252-2L MOSFETs ROHS
Manufacturer: HuaYi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2379 ea
Line Total: USD 1.19

29 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
24 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5
5 : USD 0.2431
50 : USD 0.2378
150 : USD 0.2342
500 : USD 0.2195

Read More Specifications

     
Manufacturer
Product Category
Package
Rohs
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Additional Infomation About Product

The HYG027N04LR1D is a four-terminal MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by HuaYi. It uses a TO-252-2L package which is compatible with a standard surface mount technology. The part is RoHS (Restriction of Hazardous Substances) compliant, which means it adheres to an EU standard that restricts the use of certain hazardous materials in electrical and electronic equipment to reduce environmental pollution. The HYG027N04LR1D is an N-type MOSFET, meaning that it is commonly used for source-to-ground applications. The device has a total gate charge of 42 nC and a maximum drain-source on-state resistance of 0.72 ohm. This device can handle a drain current of 20 A with an operating junction temperature of 175°C. Additionally, the device offers fast switching and a high capacitance ratio for low gate voltages.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Huayi may also be referenced as

HUAYI
HuaYi Microelectronics

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