Product Information

HSS2312

HSS2312 electronic component of HUASHUO

Datasheet
20V 6A 1.4W 15mΩ@4.5V,6A 700mV@250uA 100pF@10V N Channel 900pF@10V 12nC@4.5V -55℃~+150℃@(Tj) SOT-23L MOSFETs ROHS

Manufacturer: HUASHUO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0724 ea
Line Total: USD 0.72

6702 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
6256 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 10
Multiples : 10

Stock Image

HSS2312
HUASHUO

10 : USD 0.0587
100 : USD 0.0522
300 : USD 0.049
3000 : USD 0.0408
6000 : USD 0.0389
9000 : USD 0.0379

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The HSS2312 MOSFET manufactured by HUASHUO is an N Channel device with maximum voltage ratings of 20V, current ratings of 6A, and power dissipation of 1.4W. It has a low on-resistance of 15mO at 4.5V, gate threshold voltage of 700mV at 250uA, input capacitance of 100pF at 10V, output capacitance of 900pF at 10V, and capacitance-temperature coefficient of 12nC at 4.5V. It is suitable for operation between -55? and +150? (Tj) and comes in a SOT-23L package. This part is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUASHUO
Huashuo Semiconductor

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