Product Information

HSM24P03

HSM24P03 electronic component of HUASHUO

Datasheet
30V 24A 3.8mΩ@10V,17A 2.1W 1.6V@250uA 410pF@25V P Channel 6.24nF@25V 110nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
Manufacturer: HUASHUO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8056 ea
Line Total: USD 0.81

2968 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1992 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

HSM24P03
HUASHUO

1 : USD 0.8096
10 : USD 0.6687
30 : USD 0.6002
100 : USD 0.5298
500 : USD 0.4392
1000 : USD 0.4169

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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Additional Infomation About Product

The HSM24P03 with 30V 24A 3.8mO@10V,17A 2.1W 1.6V@250uA 410pF@25V P Channel 6.24nF@25V 110nC@10V -55?~+150?@(Tj) SOP-8 MOSFETs ROHS is a power MOSFET manufactured by HUASHUO Technology Co. Ltd. It has an operating temperature range of -55 to +150? and a rated drain-source breakdown voltage (BVdss) of 30V with a continuous drain current (Id) of 24A, a drain-source on-state resistance (Rdson) of 3.8mO@10V and a maximum single pulse drain current of 17A. Its gate source threshold voltage is 1.6V@250uA with a gate-drain capacitance of 410pF@25V. It has a junction-to-case thermal resistance of 6.24 nF@25V and a junction-to-ambient thermal resistance of 110nC@10V. The HSM24P03 is packaged in a SOP-8 package and is compliant with ROHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUASHUO may also be referenced as

HUASHUO
Huashuo Semiconductor

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