Product Information

DTC143ZUA

Name: DTC143ZUA
Brand: High Diode
SKU: DTC143ZUA_HighDiode
Availability: OutOfStock
Rating: 5 (11 reviews)

DTC143ZUA electronic component of High Diode

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Datasheet

Digital Transistors SOT-323 RoHS

Manufacturer: High Diode

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0386 ea
Line Total: USD 0.77

0 - Global Stock

MOQ: 20 Multiples: 20
Pack Size: 20

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 30 May to Tue. 04 Jun MOQ : 20 Multiples : 20 DTC143ZUA High Diode	20 : USD 0.0386 200 : USD 0.032 600 : USD 0.0273 2000 : USD 0.0234 10000 : USD 0.0227 20000 : USD 0.0224

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Additional Infomation About Product

?The DTC143ZUA is a unidirectional digital transistor with an SOT-323 RoHS package and p-channel MOSFET architecture. It is manufactured by High Diode and is designed for use in switching applications and as a level translator between up to 5V and 3V logic families. This transistor is also suitable for high speed logic level shifting. It features a maximum on-state resistance of 5 Ohms with a breakdown voltage of -30 Volts and a drain-source voltage of 20 Volts. Other features include a total gate charge of 45 nC and an ICC of 56 mA max.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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High Diode

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Manufacturer High Diode High Diode
Product Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
Category Bipolar Transistors-Pre-Biased Bipolar Transistors-Pre-Biased
Rohs y y
Package SOT - 323 SOT - 323
Brand Category High Diode High Diode
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)
Dc Current Gain Hfe@Ic Vce 80@10 mA , 5V 80@10 mA , 5V
Output Voltage Voon@Io/Ii 100 mV @5 mA /250uA 100 mV @5 mA /250uA
Collector-Emitter Saturation Voltage Vcesat@Ic Ib - -
Input Resistor 4.7kO 4.7kO
Resistor Ratio 10 10
Transition Frequency Ft 250MHz 250MHz
Power Dissipation Pd 200 mW 200 mW
Collector Current Ic 100 mA 100 mA
Input Voltage Vion@Ic Vce 1.3 V @5 mA , 300 mV 1.3 V @5 mA , 300 mV
Input Voltage Vioff@Ic Vce 500 mV @100uA , 5 V 500 mV @100uA , 5 V
Collector-Emitter Breakdown Voltage Vceo 50 V 50 V
Collector Cut-Off Current Icbo - -
Transistor Type 1 NPN - Pre - Biased 1 NPN - Pre - Biased