Product Information

S5972

S5972 electronic component of Hamamatsu

Datasheet
PHOTODIODE, 800NM, 500MHZ

Manufacturer: Hamamatsu
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 16.7621 ea
Line Total: USD 16.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

S5972
Hamamatsu

1 : USD 16.646
5 : USD 13.957
10 : USD 12.495
50 : USD 11.3282
100 : USD 10.8073
250 : USD 10.2532

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity
Diode Case Style
No Of Pins
Operating Temperature Min
Operating Temperature Max
Packaging
Msl
Svhc
Active Area
Bandwidth
External Diameter
External Length / Height
Lead Length
Lead Spacing
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Wavelength Typ
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PHOTODIODE Si PIN photodiode , , S5971 S5972 S5973 series High-speed photodiodes (S5973 series: 1 GHz) S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. S5973 series includes a mini-lens type (S5973-01) that can be efficiently coupled to an optical fiber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection. Features Applications l l High-speed response Optical fiber communications S5971 : 100 MHz (VR=10 V) l High-speed photometry S5972 : 500 MHz (VR=10 V) l Violet laser detection (S5973-02) S5973 series: 1 GHz (VR=3.3 V) l Low price l High sensitivity S5973-02: 0.3 A/W, QE=91 % (=410 nm) l High reliability General ratings / Absolute maximum ratings Absolute maximum ratings Dimensional Active area Effective Reverse Power Operating Storage Package outline/ Type No. size active area voltage dissipation temperature temperature Window VR Max. P Topr Tstg 1 material * 2 (mm) (mm) (mm ) (V) (mW) (C) (C) S5971 1.2 1.1 S5972 /K 0.8 0.5 S5973 TO-18 20 50 -40 to +100 -55 to +125 S5973-01 /L 0.4 0.12 S5973-02 /K Electrical and optical characteristics Photo sensitivity Short Temp. Spectral Peak S circuit Dark coefficient Cut-off Terminal response sensitivity (A/W) current current of frequency capacitance NEP Type No. range wavelength Isc ID ID fc Ct VR=10 V p 100 lx TCID f=1 MHz 660 780 830 p nm nm nm Typ. Max. 1/2 (times/C) (nm) (nm) (A) (nA) (nA) (GHz) (pF) (W/Hz ) 320 to 3 3 3 -15 0.07 * S5971 900 0.64 0.6 1.0 1 * 0.1 * 7.4 10 3 1060 0.55 3 * 3 3 3 -15 0.01 * S5972 800 0.57 0.44 0.55 0.42 0.5 * 0.5 * 3.1 10 1.15 S5973 320 to 0.09 0.52 0.51 0.47 4 4 4 4 -15 1000 0.001 * S5973-01 760 0.42 0.1 * 1* 1.6 * 1.5 10 2 S5973-02 0.45 0.3 * 0.42 0.37 0.09 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: =410 nm *3: VR=10 V R *4: V =3.3 V 1Si PIN photodiode S5971, S5972, S5973 series Spectral response Photo sensitivity temperature characteristics (Typ.) (Typ. Ta=25 C) +1.5 0.7 S5971 S5971 0.6 +1.0 0.5 S5972 0.4 S5973-02 S5973 SERIES S5972 +0.5 0.3 S5973/-01 0.2 0 0.1 0 -0.5 200 400 600 800 1000 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KPINB0158EA KPINB0157EA Frequency response Cut-off frequency vs. reverse voltage (Typ. Ta=25 C, =830 nm, RL=50 ) (Typ. Ta=25 C, =830 nm, RL=50 ) +10 10 GHz S5973 SERIES S5973 SERIES (VR=3.3 V) 0 1 GHz S5972 -3 S5971 (VR=10 V) -10 100 MHz S5971 S5972 (VR=10 V) -20 10 MHz 1 MHz 10 MHz 100 MHz 1 GHz 10 GHz 1 10 100 REVERSE VOLTAGE (V) FREQUENCY KPINB0160EB KPINB0159EB 2 PHOTO SENSITIVITY (A/W) RELATIVE OUTPUT (dB) CUT-OFF FREQUENCY TEMPERATURE COEFFICIENT (%/C)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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