Product Information

GS8342DT20BGD-500

GS8342DT20BGD-500 electronic component of GSI Technology

Datasheet
SRAM 1.8 or 1.5V 2M x 18 36M

Manufacturer: GSI Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 64.1268 ea
Line Total: USD 961.9

0 - Global Stock
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 15
Multiples : 15

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GS8342DT20BGD-500
GSI Technology

15 : USD 59.133
30 : USD 57.0055
60 : USD 55.591
105 : USD 51.221
255 : USD 51.221
510 : USD 50.646
1005 : USD 49.243

     
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GS8342DT06/11/20/38BD-550/500/450/400/350 550 MHz350 MHz 165-Bump BGA TM 36Mb SigmaQuad-II+ 1.8 V V DD Commercial Temp 1.8 V or 1.5 V I/O Burst of 4 SRAM Industrial Temp SRAMs. The GS8342DT06/11/20/38BD SigmaQuad SRAMs Features are just one element in a family of low power, low voltage 2.5 Clock Latency HSTL I/O SRAMs designed to operate at the speeds needed to Simultaneous Read and Write SigmaQuad Interface implement economical high performance networking systems. JEDEC-standard pinout and package Dual Double Data Rate interface Byte Write controls sampled at data-in time Clocking and Addressing Schemes Burst of 4 Read and Write Dual-Range On-Die Termination (ODT) on Data (D), Byte The GS8342DT06/11/20/38BD SigmaQuad-II+ SRAMs are Write (BW), and Clock (K, K) intputs synchronous devices. They employ two input register clock 1.8 V +100/100 mV core power supply inputs, K and K. K and K are independent single-ended clock 1.5 V or 1.8 V HSTL Interface inputs, not differential inputs to a single differential clock input Pipelined read operation buffer. Fully coherent read and write pipelines ZQ pin for programmable output drive strength Each internal read and write operation in a SigmaQuad-II+ B4 Data Valid Pin (QVLD) Support RAM is four times wider than the device I/O bus. An input IEEE 1149.1 JTAG-compliant Boundary Scan data bus de-multiplexer is used to accumulate incoming data 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package before it is simultaneously written to the memory array. An RoHS-compliant 165-bump BGA package available output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore the address SigmaQuad-II Family Overview field of a SigmaQuad-II+ B4 RAM is always two address pins The GS8342DT06/11/20/38BD are built in compliance with less than the advertised index depth (e.g., the 4M x 8 has a 1M the SigmaQuad-II+ SRAM pinout standard for Separate I/O addressable index). synchronous SRAMs. They are 37,748,736-bit (36Mb) Parameter Synopsis -550 -500 -450 -400 -350 tKHKH 1.81 ns 2.0 ns 2.2 ns 2.5 ns 2.86 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.01c 8/2017 1/30 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8342DT06/11/20/38BD-550/500/450/400/350 1M x 36 SigmaQuad-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NC/SA NC/SA NC/SA A CQ W BW2 K BW1 R SA CQ (288Mb) (72Mb) (144Mb) B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17 Q8 C D27 Q28 D19 V SA NC SA V D16 Q7 D8 SS SS D D28 D20 Q19 V V V V V Q16 D15 D7 SS SS SS SS SS E Q29 D29 Q20 V V V V V Q15 D6 Q6 DDQ SS SS SS DDQ F Q30 Q21 D21 V V V V V D14 Q14 Q5 DDQ DD SS DD DDQ G D30 D22 Q22 V V V V V Q13 D13 D5 DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J D31 Q31 D23 V V V V V D12 Q4 D4 DDQ DD SS DD DDQ K Q32 D32 Q23 V V V V V Q12 D3 Q3 DDQ DD SS DD DDQ L Q33 Q24 D24 V V V V V D11 Q11 Q2 DDQ SS SS SS DDQ M D33 Q34 D25 V V V V V D10 Q1 D2 SS SS SS SS SS N D34 D26 Q25 V SA SA SA V Q10 D9 D1 SS SS P Q35 D35 Q26 SA SA QVLD SA SA Q9 D0 Q0 R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA13 x 15 mm Body1 mm Bump Pitch Notes: 1. BW0 controls writes to D0:D8 BW1 controls writes to D9:D17 BW2 controls writes to D18:D26 BW3 controls writes to D27:D35 2. Pins A2, A3, and A10 are the expansion addresses. Rev: 1.01c 8/2017 2/30 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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