The G3S06006J is a TO-220 RoHS-compliant Schottky Barrier Diode (SBD) manufactured by GPT. This component is designed to be a low voltage drop, ultra-high efficiency diode and operates from 0 to 40 volts. The G3S06006J has a forward current of 6A and a reverse voltage of 650V, making it ideal for rectifying and switching applications. It is constructed using special semiconductor materials that make it capable of providing a fast switching response, low leakage current, and low forward voltage. This diode also features an efficiency that is significantly higher than normal Si diodes, meaning it can generate higher power output and improved system performance while reducing system losses. The G3S06006J is an ideal choice for applications where high efficiency, low heat loss, and a low forward voltage drop are needed.