Product Information

BC547

BC547 electronic component of Generic

Datasheet
TRANS NPN 45V 100MA TO-92 ELECTRONICS PART

Manufacturer: Generic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0624 ea
Line Total: USD 0.06

0 - Global Stock
Ships to you by
Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you by Mon. 20 May

MOQ : 1
Multiples : 1

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BC547
Generic

1 : USD 0.0624
10 : USD 0.0312
25 : USD 0.0281
100 : USD 0.0234
500 : USD 0.0211

     
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BC547 / BC547A / BC547B / BC547C Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO V Collector-Base Voltage 50 V CES V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units BC547 / A / B / C P Total Device Dissipation 625 mW D Derate above 25 C 5.0 mW/ C R Thermal Resistance, Junction to Case 83.3 C/W JC Thermal Resistance, Junction to Ambient 200 R C/W JA 1997 Fairchild Semiconductor Corporation 547ABC, Rev BBC547 / BC547A / BC547B / BC547C NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 45 V (BR)CEO C B V Collector-Base Breakdown Voltage 50 V I = 10 A, I = 0 (BR)CBO C E V Collector-Base Breakdown Voltage I = 10 A, I = 0 50 V (BR)CES C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 6.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 15 nA CBO CB E V = 30 V, I = 0, T = +150 C 5.0 A CB E A ON CHARACTERISTICS h DC Current Gain V = 5.0 V, I = 2.0 mA 547 110 800 FE CE C 547A 110 220 547B 200 450 547C 420 800 V Collector-Emitter Saturation Voltage I = 10 mA, I = 0.5 mA 0.25 V C B CE(sat) I = 100 mA, I = 5.0 mA 0.60 V C B Base-Emitter On Voltage V = 5.0 V, I = 2.0 mA 0.58 0.70 V V CE C BE(on) V = 5.0 V, I = 10 mA 0.77 V CE C SMALL SIGNAL CHARACTERISTICS Small-Signal Current Gain I = 2.0 mA, V = 5.0 V, 125 900 h C CE fe f = 1.0 kHz NF Noise Figure V = 5.0 V, I = 200 A, 10 dB CE C R = 2.0 k , f = 1.0 kHz, S B = 200 Hz W

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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