GS66508P-E05-MR

GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features 650 V enhancement mode power switch Bottom-side cooled configuration R = 50 m DS(on) I = 30 A DS(max) Ultra-low FOM Island Technology die Low inductance GaNPX package Circuit Symbol Package Outline Easy gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Very high switching frequency (> 100 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 10.0 x 8.7 mm PCB footprint Source Sense (SS) pin for optimized gate drive The thermal pad must be connected to Source, RoHS 6 compliant S (pad 4), for best performance Applications Description High efficiency power conversion The GS66508P is an enhancement mode GaN-on- High density power conversion silicon power transistor. The properties of GaN AC-DC Converters allow for high current, high voltage breakdown Bridgeless Totem Pole PFC and high switching frequency. GaN Systems ZVS Phase Shifted Full Bridge implements patented Island Technology cell Half Bridge topologies layout for high-current die performance & yield. Synchronous Buck or Boost GaNPX packaging enables low inductance & low Uninterruptable Power Supplies Industrial Motor Drives thermal resistance in a small package. The Single and 3 inverter legs GS66508P is a bottom-side cooled transistor that Solar and Wind Power offers very low junction-to-case thermal resistance Fast Battery Charging for demanding high power applications. These Class D Audio amplifiers features combine to provide very high efficiency 400 V input DC-DC converters power switching. On Board Battery Chargers Traction Drive Rev 190524 2009-2019 GaN Systems Inc. 1 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage VDS 650 V Drain-to-Source Voltage - transient (note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (note 1) V -20 to +10 V GS(transient) Continuous Drain Current (Tcase = 25 C) (note 2) IDS 30 A Continuous Drain Current (T = 100 C) (note 2) I 25 A case DS Pulse Drain Current (Pulse width 100 s) I 72 A DS Pulse (1) Pulse < 1 s (2) Limited by saturation Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 0.5 C /W JC Thermal Resistance (junction-to-top) R 7.0 C /W JT Thermal Resistance (junction-to-ambient) (note 3) R 24 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers 2 under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Status Package type Qty method Diameter Width NRND GaNPX package GS66508P-TR Tape-and-Reel 2000 13 (330mm) 24mm (note 4) Bottom-Side Cooled NRND GaNPX package GS66508P-MR Mini-Reel 250 7 (180mm) 24mm (note 4) Bottom-Side Cooled (4) Not Recommended for New Designs. Please see GS66508B at www.gansystems.com Rev 190524 2009-2019 GaN Systems Inc. 2 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback