Product Information

2N7002KD

2N7002KD electronic component of FUXINSEMI

Datasheet
60V 340mA 900mO@10V,500mA 150mW 2 N-Channel SOT-363 MOSFETs ROHS
Manufacturer: FUXINSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.04 ea
Line Total: USD 0.8

7740 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
19632 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 20
Multiples : 20

Stock Image

2N7002KD
FUXINSEMI

20 : USD 0.0385
200 : USD 0.0315
600 : USD 0.0277
3000 : USD 0.0209
9000 : USD 0.0189
21000 : USD 0.0178

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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Additional Infomation About Product

The 2N7002KD is a 60V 340mA 900mO@10V,500mA 150mW 2 N-Channel SOT-363 MOSFET manufactured by FUXINSEMI. This device is a RoHS certified device and designed for general purpose uses. It has an integrated thermal resistance rating of 8K/W junction to ambient, a maximum drain-source voltage rating of 60V and a maximum drain current rating of 500mA. The gate-source voltage rating is ±20V and the maximum power rating is 150mW. This device is suitable for various applications including motor control, battery management, and telecom/industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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