Product Information

QP100-6-SM

QP100-6-SM electronic component of First Sensor

Datasheet
Photodiodes Quadrant 11.2mm Dia Area with 42um Gaps

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000

Stock Image

QP100-6-SM
First Sensor

1000 : USD 50.436
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Packaging
Type
Width
Brand
Photocurrent
Responsivity
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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T N A I L P M O C Pacific Silicon Sensor Quadrant Series Data Sheet Part Description QP100-6-SM Order 01-019 2 ACTIVE AREAS: 4 X 24.35mm 14.50 (11.20mm DIA w/ 50m GAPS) LEAD 7 0.90 ANODE D 67 8 9 10 LEAD 9 AD ANODE A 16.50 LEAD 3 LEAD 4 CATHODE 11.96 SQ ANODE C BC 3 8.25 1.80 54 21 TYP 1 1.5 1.00 1.00 MAX TYP 2.54 LEAD 2 TYP ANODE B FRONTSIDE VIEW BACKSIDE VIEW FEATURES DESCRIPTION APPLICATIONS 2 4 X 24.35 mm Low Dark Current Quadrant Photodiode 11.2 mm active area Laser beam position sensor with P on N construction and 50 m gaps. Surface mount Small gap Autocollimators packaged with clear epoxy encapsulant. Low dark current Optical tweezers High resolution Ellipsometers ABSOLUTE MAXIMUM RATING SPECTRAL RESPONSE SYMBOL PARAMETER MIN MAX UNITS T Storage Temp -15 +80 C STG 0.70 T Operating Temp -15 +60 C OP Reverse Operating 0.60 V - 50 V R(OP) Voltage 0.50 I Peak DC Current - 10 mA (PEAK) 0.40 SCHEMATIC 0.30 LEAD 3 0.20 A B C D 0.10 LEAD 9 LEAD 2 LEAD 4 LEAD 7 0.00 900 1000 1100 400 500 600 700 800 LEADS 1, 5, 6, 8, 10 NOT CONNECTED WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS 22 C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS I Dark Current* V = 10 V --- 5.0 --- nA D R C Capacitance* V = 10 V --- --- 50.0 pF R --- 0.40 --- V = 0 V = 633 nm R Responsivity A/W --- --- V = 0 V = 900 nm 0.64 R V Breakdown Voltage I = 10 A --- 15 --- V BR R Rise Time V = 10 V = 850 nm R = 50 --- 50 --- ns t R L r Uniformity of Sensitivity V = 10 V = 880 nm --- 1 2 % R * per element Disclaimer: Due to our policy of continued development, specifications are subject to change without notice. Package is not suitable for reflow soldering. USA: International sales: Pacific Silicon Sensor, Inc. Silicon Sensor International AG 5700 Corsa Avenue, 105 Peter-Behrens-Str. 15 Westlake Village, CA 91362 USA D-12459 Berlin, Germany Phone (818) 706-3400 Phone +49 (0)30-63 99 23 10 Fax (818) 889-7053 Fax +49 (0)30-63 99 23 33 Email: sales pacific-sensor.com Email: sales silicon-sensor.de www.pacific-sensor.com www.silicon-sensor.de Proud Members of the Silicon Sensor International AG Group of companies 9/24/2010 S H o R RESPONSIVITY (A/W)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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