Product Information

M38510/20802BKA

M38510/20802BKA electronic component of E2v

Datasheet
PROM Parallel 4K-bit 5V 24-Pin CFPAK

Manufacturer: E2v
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1073.1787 ea
Line Total: USD 1073.18

111 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
111 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 1073.1787
5 : USD 817.6612
10 : USD 686.8444
25 : USD 464.0869
100 : USD 429.2794

     
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INCH-POUND MIL-M-38510/208F 21 August 2013 SUPERSEDING MIL-M-38510/208E 12 October 2010 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON Inactive for new design after 24 July 1995 This specification is approved for use by all Departmentsand Agencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit 01 512 word/8 bits per word PROM with uncommitted collector 02 512 word/8 bits per word PROM with active pull-up and a choice third high-impedance state output 03 512 word/8 bits per word PROM with active pull-up and a third high-impedance state output 04 512 word/8 bits per word PROM with uncommitted collector 05 512 word/8 bits per word PROM with active pull-up and a third high-impedance state output 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack X See figure 1 24 Flat pack Y See figure 2 20 Dual-in-line Z CQCC1-N24 24 Square leadless chip carrier Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DLA LAND AND MARITIME-VAS, P. O. Box 3990, Columbus, OH 43218- 3990, or emailed to Memory dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-M-38510/208F 1.3 Absolute maximum ratings. Supply voltage range ............................................................................. -0.5 V dc to +7.0 V dc Input voltage range ................................................................................ -1.5 V dc at -10 mA to +5.5 V dc Storage temperature range .................................................................... -65 to +150C Lead temperature (soldering, 10 seconds) .............................................. +300C Thermal resistance, junction to case ( ) 1/: JC Cases J, K, and Y ............................................................................. 30C/W Case X and Z ................................................................................... 36 C/W Output voltage applied ............................................................................ -0.5 V dc dc to +V CC Output sink current ............................................................................ 100 mA Maximum power dissipation (P ) 2/ ........................................................ 1.02 W D Maximum, junction temperature (T ) ....................................................... +175C J 1.4 Recommended operating conditions. Supply voltage ....................................................................................... +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage .......................................................... 2.0 V dc Maximum low-level input voltage .......................................................... 0.8 V dc Normalized fanout (each output) .......................................................... 8 mA 3/ Case operating temperature range (T ) .................................................. -55 C to +125 C C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outline (Copies of these documents are available online at

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