INCH-POUND MIL-M-38510/203E 18 September 2007 SUPERSEDING MIL-M-38510/203D 19 January 2006 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON Inactive for new design after 24 July 1995 This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped * vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit 01, 03 256 word/4 bits per word PROM with uncommitted collector. 02, 04 256 word/4 bits per word PROM with active pull-up and a third high impedance state output. 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to mailto:memory dscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-M-38510/203E 1.3 Absolute maximum ratings. Supply voltage range .............................................................................. -0.5 V dc to +7.0 V dc Input voltage range ................................................................................. -1.5 V dc at -10 mA to +5.5 V dc Storage temperature range ..................................................................... -65 to +150C Lead temperature (soldering, 10 seconds) .............................................. +300C Thermal resistance, junction to case ( ) 1/ ........................................ See MIL-STD-1835 JC Output supply voltage ............................................................................. -0.5 C dc to +V CC Output sink current .................................................................................. +100 mA Maximum power dissipation (P ) 2/......................................................... 739 mW dc D Maximum junction temperature (T )......................................................... +175C 3/ J 1.4 Recommended operating conditions. Supply voltage (V ) ............................................................................... +4.5 V dc minimum to CC +5.5 V dc maximum Minimum high-level input voltage (V ) ................................................... 2.0 V dc IH Maximum low-level input voltage (V ) .................................................... 0.8 V dc IL Fanout (each output) ............................................................................ 16 mA 4/ Case operating temperature range (T )................................................... -55 C to +125 C C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outline 1/ Heat sinking is recommended to reduce the junction temperature. 2/ Must withstand the added P due to short circuit test (e.g. I ). D OS 3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions per MIL-PRF-38535. 4/ 12 mA for circuit B. 2