CMOS Static RAM IDT7164S IDT7164L 64K (8K x 8-Bit) Features Description High-speed address/chip select access time The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K Military: 20/25/35/45/55/70/85/100ns (max.) x 8. It is fabricated using high-performance, high-reliability CMOS tech- Industrial: 20/25ns (max.) nology. Commercial: 20/25ns (max.) Address access times as fast as 20ns are available and the circuit offers Low power consumption a reduced power standby mode. When CS1 goes HIGH or CS2 goes Battery backup operation 2V data retention voltage LOW, the circuit will automatically go to, and remain in, a low-power stand- (L Version only) by mode. The low-power (L) version also offers a battery backup data Produced with advanced CMOS high-performance retention capability at power supply levels as low as 2V. technology All inputs and outputs of the IDT7164 are TTL-compatible and Inputs and outputs directly TTL-compatible operation is from a single 5V supply, simplifying system designs. Fully Three-state outputs static asynchronous circuitry is used, requiring no clocks or refreshing Available in 28-pin DIP, CERDIP and SOJ for operation. Military product compliant to MIL-STD-883, Class B The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28- pin 600 mil CERDIP. Military grade product is manufactured in compliance with MIL-STD- 883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. Functional Block Diagram A0 V CC GND ADDRESS 65,536 BIT DECODER MEMORY ARRAY A 12 0 7 I/O 0 I/O CONTROL I/O7 CS1 CS2 CONTROL LOGIC OE 2967 drw 01 WE OCTOBER 2013 1 2013 Integrated Device Technology, Inc. DSC-2967/16IDT7164S/L CMOS Static RAM 64K (8K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges (1) Pin Configurations Absolute Maximum Ratings Symbol Rating Com l. Mil. Unit VCC NC 1 28 (2) VTERM Terminal Voltage -0.5 to +7.0 -0.5 to +7.0 V WE A12 2 27 with Respect CS2 A7 3 26 to GND A6 A8 4 25 o D28-1 TA Operating 0 to +70 -55 to +125 C A9 A5 5 24 D28-3 Temperature A11 A4 6 P28-2 23 o SO28-5 Temperature -55 to +125 -65 to +135 C A3 7 22 OE TBIAS Under Bias A2 A10 8 21 CS1 A1 9 20 o TSTG Storage Temperature -55 to +125 -65 to +150 C I/O7 A0 10 19 PT Power Dissipation 1.0 1.0 W I/O6 I/O0 11 18 17 I/O1 I/O5 12 IOUT DC Output Current 50 50 mA 16 I/O4 I/O2 13 2967 tbl 02 15 I/O3 GND 14 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may 2967 drw 02 cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the DIP/SOJ operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Top View 2. VTERM must not exceed VCC + 0.5V. (1,2,3) Pin Descriptions Truth Table WE CS1 OE CS2 I/O Function Name Description X H X X High-Z Deselected - Standby (ISB) A0 - A12 Address X X L X High-Z Deselected - Standby (ISB) I/O0 - I/O7 Data Input/Output X VHC or X High-Z Deselected - Standby (ISB1) VHC CS1 Chip Select VLC CS2 Chip Select XX VLC X High-Z Deselected - Standby (ISB1) WE Write Enable H L H H High-Z Output Disabled Output Enable OE HL H L DATAOUT Read Data GND Ground LL H X DATAIN Write Data VCC Power 2967 tbl 03 NOTES: 2967 tbl 01 1. CS2 will power-down CS1, but CS1 will not power-down CS2. 2. H = VIH, L = VIL, X = don t care. 3. VLC = 0.2V, VHC = VCC - 0.2V Recommended DC Operating Conditions Recommended Operating Symbol Parameter Min. Typ. Max. Unit Temperature and Supply Voltage VCC Supply Voltage 4.5 5.0 5.5 V Grade Temperature GND Vcc GND Ground 0 0 0 V O O Military -55 C to +125 C0V 5V 10% VIH Input HIGH Voltage 2.2 VCC + 0.5 V O O Industrial -40 C to +85 C0V 5V 10% (1) VIL Input LOW Voltage -0.5 0.8 V O O Commercial 0 C to +70 C0V 5V 10% 2967 tbl 05 NOTE: 2967 tbl 04 1. VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle. 2