A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data Case: DFN3020B-8 PNP Transistor Case Material: Molded Plastic, Green Molding Component BV > -12V CEO Terminals: Pre-Plated NiPdAu leadframe I = -4A Continuous Collector Current C Nominal package height: 0.8mm Low Saturation Voltage (-140mV max -1A) UL Flammability Rating 94V-0 R = 65m for a low equivalent On-Resistance SAT Moisture Sensitivity: Level 1 per J-STD-020 h characterized up to -10A for high current gain hold up FE Weight: 0.013 grams (approximate) Schottky Diode BV > 40V R I = 3A Average Peak Forward Current FAV Applications Low V < 500mV ( 1A) for reduced power loss F DC DC Converters Fast switching due to Schottky barrier Charging circuits Low profile 0.8mm high package for thin applications Mobile phones R efficient, 40% lower than SOT26 JA 2 Motor control 6mm footprint, 50% smaller than TSOP6 and SOT26 Portable applications Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. Green Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability DFN3020B-8 C1 K2 K2 K2 C1 C1 B1 K2 C1 A2 E1 A2 n/c E1 B1 Pin 1 Bottom View Top View PNP Transistor Schottky Diode Bottom View Pin-Out Equivalent Circuit n/c = Not Connected internally Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTPS717MCTA 1S1 7 8 3000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website A Product Line of Diodes Incorporated ZXTPS717MC PNP - Maximum Ratings T = 25C unless otherwise specified A Parameter Symbol Limit Unit Collector-Base Voltage V -20 CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -7 EBO Peak Pulse Current I -12 CM (Notes 4 and 7) -4 Continuous Collector Current A I C (Notes 5 and 7) -4.4 Base Current I -1 B PNP - Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.5 (Notes 4 & 7) 12 2.45 (Notes 5 & 7) Power Dissipation 19.6 W P D Linear Derating Factor 1.13 mW/C (Notes 6 & 7) 8 1.7 (Notes 6 & 8) 13.6 (Notes 4 & 7) 83.3 (Notes 5 & 7) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 6 & 7) 111 C/W (Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Note 9) R 17.1 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec. 2 ) FR4 PCB with high coverage of single sided 1oz copper. 6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pad). 2 of 10 April 2011 ZXTPS717MC Diodes Incorporated www.diodes.com Document Number DS31936 Rev. 3 - 2