Product Information

ZXTP5401GTA

ZXTP5401GTA electronic component of Diodes Incorporated

Datasheet
Bipolar (BJT) Transistor PNP 150 V 600 mA 100MHz 2 W Surface Mount SOT-223-3

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.506 ea
Line Total: USD 0.51

2336 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
287 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

ZXTP5401GTA
Diodes Incorporated

1 : USD 0.4648
10 : USD 0.3722
30 : USD 0.3309
100 : USD 0.2816
500 : USD 0.26
1000 : USD 0.2462

2336 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

ZXTP5401GTA
Diodes Incorporated

1 : USD 0.506
10 : USD 0.4347
100 : USD 0.3024
500 : USD 0.2358
1000 : USD 0.1909
2000 : USD 0.1644

1 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

ZXTP5401GTA
Diodes Incorporated

1 : USD 0.923
5 : USD 0.2756
25 : USD 0.2444
78 : USD 0.2119
213 : USD 0.2002

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BV > -150V CEO BV > -5V EBO I = -600mA C(cont) P = 2W D Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features B 150V rating SOT223 package E Applications E High voltage amplification C C Ordering information B Device Reel size Tape width Quantity per (inches) (mm) reel Pinout - top view ZXTP5401GTA 7 12 1000 ZXTP5401GTC 13 12 4000 Device marking ZXTP 5401 Issue 1 - August 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP5401G Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -160 V CBO Collector-emitter voltage V -150 V CEO Emitter-base voltage V -5 V EBO (a) I -600 mA Continuous collector current C Peak collector current I -2 A C (a) P 2W Power dissipation at T =25C D A Linear derating factor 16 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 62.5 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Issue 1 - August 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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