Product Information

ZXTP25020BFHTA

ZXTP25020BFHTA electronic component of Diodes Incorporated

Datasheet
Diodes Incorporated Bipolar Transistors - BJT PNP 20V 4A 3-PIN
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.221 ea
Line Total: USD 0.22

12 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
12 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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ZXTP25020BFHTA
Diodes Incorporated

1 : USD 0.221

2910 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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ZXTP25020BFHTA
Diodes Incorporated

1 : USD 0.3125
10 : USD 0.3088
25 : USD 0.2855
100 : USD 0.2552
250 : USD 0.2501
500 : USD 0.2452
1000 : USD 0.2452
3000 : USD 0.2452

2900 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

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ZXTP25020BFHTA
Diodes Incorporated

1 : USD 0.4372
10 : USD 0.3868
30 : USD 0.3646
100 : USD 0.3384
500 : USD 0.3102
1000 : USD 0.3043

2716 - WHS 4


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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ZXTP25020BFHTA
Diodes Incorporated

1 : USD 0.598
10 : USD 0.5175
100 : USD 0.3703
500 : USD 0.3151
1000 : USD 0.2691
3000 : USD 0.2473

14550 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

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ZXTP25020BFHTA
Diodes Incorporated

3000 : USD 0.2344

2910 - WHS 6


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 31
Multiples : 1

Stock Image

ZXTP25020BFHTA
Diodes Incorporated

31 : USD 0.2745
100 : USD 0.2454
250 : USD 0.2405
500 : USD 0.2357

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BV > -40V CEX BV > -20V CEO BV > -7V ECO I = -4A C(cont) R = 32 m CE(sat) V < -60mV 1A CE(sat) P = 1.25W D Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features High power dissipation SOT23 package E High peak current Low saturation voltage 40V forward blocking voltage 7V reverse blocking voltage E Applications MOSFET and IGBT gate driving C DC - DC converters Motor drive B High side driver Pinout - top view Battery charging Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP25020BFHTA 7 8 3,000 Device marking 1A9 Issue 2 - March 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXTP25020BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -40 V CBO Collector-emitter voltage (forward blocking) V -40 V CEX Collector-emitter voltage V -20 V CEO Emitter-collector voltage (reverse blocking) V -7 V ECO Emitter-base voltage V -7 V EBO (b) I -4 A Continuous collector current C Peak pulse current I -10 A CM (a) P 0.73 W Power dissipation at T =25C D amb Linear derating factor 5.84 mW/C (b) P 1.05 W Power dissipation at T =25C D amb Linear derating factor 8.4 mW/C (c) P 1.25 W Power dissipation at T =25C D amb Linear derating factor 9.6 mW/C (d) P 1.81 W Power dissipation at T =25C D amb Linear derating factor 14.5 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 2 - March 2008 2 www.zetex.com Zetex Semiconductors plc 2008

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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