NOT RECOMMENDED FOR NEW DESIGN - SBRT6U10LP CONTACT US 6A TRENCH SBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented Trench SBR Technology Provides Superior V (MAX) (V) I (mA) F R(MAX) V (V) I (A) RRM O +25C +25C Avalanche Capability Versus Schottky Diodes, Ensuring More 10 6 0.48 0.3 Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (V ) Better Efficiency F and Cooler Operation Reduced High Temperature Reverse Leakage Increased Reliability against Thermal Runaway Failure in High Temperature Operation Totally Lead-Free Finish & RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data The SBRT6U10LP provides very low VF and excellent reverse Case:U-DFN3030-8 leakage stability at high temperatures. It is ideal for use as bypass Case Material: Molded Plastic, Green Molding Compound diode and rectifier, freewheel diode or blocking diode in applications UL Flammability Classification Rating 94V-0 such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solar Panels Solderable per MIL-STD-202, Method 208 Blocking Diode Polarity: See Below Bypass Diode Weight: 0.0199 grams (Approximate) Boost Diode Recirculating Diode U-DFN3030-8 Top View Bottom View Schematic and Pin Configuration Ordering Information (Note 4) Part Number Case Packaging SBRT6U10LP-7 U-DFN3030-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See SBRT6U10LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 10 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 6 A O Non-Repetitive Peak Forward Surge Current 8.3ms 55 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 5.5 C/W JC Typical Thermal Resistance Junction to Ambient (Note 5) R 65 C/W JA Operating Temperature Range V 80% V -55 to +150 R RRM +175 T C V 50% V J R RRM +200 DC Forward Mode (Note 7) Storage Temperature Range -55 to +150 C T STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 6) V 0.48 V I = 6A, T = +25C F F J V = 10V, T = +25C 300 A R J Leakage Current (Note 6) I R 25 mA V = 10V, T = +125C R J Notes: 5. Device mounted on FR-4 PCB pad layout 1-inch 2oz copper pad. 6. Short duration pulse test used to minimize self-heating effect. 7. Max junction temperature guaranteed for two hours. 1000000 10 T = 175C A T = 175C 100000 A T = 150C T = 150C A A T = 125C 1 10000 A T = 85C A 1000 0.1 100 T = 25C A T = 125C A 10 0.01 T = 85C 1 A 0.1 T = 25C A 0.01 0.001 0 2 4 6 8 10 0 100 200 300 400 500 600 V , REVERSE VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (mV) R F Figure 1 Typical Forward Characteristics Figure 2 Typical Reverse Characteristics 2 of 6 April 2021 SBRT6U10LP Diodes Incorporated www.diodes.com Document number: DS37479 Rev. 6 - 3 I , INSTANTANEOUS FORWARD CURRENT (A) F I , LEAKAGE CURRENT (A) R