Product Information

DMT8012LSS-13

DMT8012LSS-13 electronic component of Diodes Incorporated

Datasheet
MOSFET MOSFET BVDSS: 61V-100V

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0323 ea
Line Total: USD 1.03

4510 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3443 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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DMT8012LSS-13
Diodes Incorporated

1 : USD 1.0323
10 : USD 0.8484
100 : USD 0.6597
500 : USD 0.5589
1000 : USD 0.4556
2500 : USD 0.4449

     
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RoHS - XON
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DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max 100% Unclamped Inductive Switch (UIS) Test in Production D BV R Max DSS DS(ON) T = +25C High Conversion Efficiency A Low R Minimizes On-State Losses DS(ON) 16.5m @ V = 10V 9.7A GS Low Input Capacitance 80V Fast Switching Speed 20m @ V = 4.5V 8.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is Case: SO-8 designed to minimize R , yet maintain superior switching Case Material: Molded Plastic,Gree Molding Compound. DS(ON) performance. This device is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Notebook Battery Power Management Terminal Finish Matte Tin Annealed over Copper Leadframe. Loadswitches Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (Approximate) Power Management Functions DC-DC Converters D S D SO-8 S D G S D G D S Top View Equivalent Circuit Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT8012LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT8012LSS Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 80 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 9.7 A A I D State 7.8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.6 A t<10s I A D 9.3 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A I DM Avalanche Current, L=0.1mH 11.6 A I AS Avalanche Energy, L=0.1mH E 10.2 mJ AS Thermal Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.5 W P D Steady State 80 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 48 C/W Total Power Dissipation (Note 6) 2 W P D Steady State 53 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 6) 6.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 80 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 64V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 12.7 16.5 V = 10V, I = 12A GS D Static Drain-Source On-Resistance R m DS(ON) 15 20 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1,949 ISS V = 40V, V = 0V, DS GS Output Capacitance 177 pF C OSS f = 1MHz Reverse Transfer Capacitance 10 C RSS Gate Resistance 0.7 R V = 0V, V = 0V, f = 1MHz G DS GS 15 Total Gate Charge (V = 4.5V) Q GS G Total Gate Charge (V = 10V) Q 34 GS G nC VDS = 40V, ID = 12A Gate-Source Charge Q 6 GS Gate-Drain Charge Q 4.5 GD Turn-On Delay Time t 4.9 D(ON) Turn-On Rise Time t 3.8 V = 40V, V = 10V, R DD GS ns Turn-Off Delay Time 16.5 t I = 12A, R = 1.6 D(OFF) D G Turn-Off Fall Time 3.5 t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT8012LSS May 2016 Diodes Incorporated www.diodes.com Document number: DS38164 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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