Product Information

DMN3024SFG-7

DMN3024SFG-7 electronic component of Diodes Incorporated

Datasheet
MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K
Manufacturer: Diodes Incorporated
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Price (USD)

1: USD 0.693 ea
Line Total: USD 0.69

3684 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1043 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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DMN3024SFG-7
Diodes Incorporated

1 : USD 0.4746
10 : USD 0.4117
100 : USD 0.3073
500 : USD 0.2421
1000 : USD 0.1863
2000 : USD 0.1696
10000 : USD 0.1566

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I max D V R max (BR)DSS DS(ON) Low R ensures on state losses are minimized DS(ON) T = 25C A Small form factor thermally efficient package enables higher 23m V = 10V 7.5A GS density end products 30V Occupies just 33% of the board area occupied by SO-8 enabling 33m V = 4.5V 6.3 A GS smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: POWERDI3333-8 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(on) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Backlighting Power Management Functions Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.008 grams (approximate) POWERDI3333-8 Pin 1 8 S 1 S S 7 2 G 6 3 D 5 4 D D Top View D Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN3024SFG-7 POWERDI3333-8 2000/Tape & Reel DMN3024SFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3024SFG Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage V 25 V GSS Steady T = 25C 7.5 A I A D State 6.0 T = 70C A Continuous Drain Current (Note 6) V = 10V GS T = 25C A 10.5 t<10s A I D 8.5 T = 70C A Steady T = 25C 6.3 A I A D State 5.0 T = 70C A Continuous Drain Current (Note 6) V = 4.5V GS T = 25C A 8.5 t<10s I A D 7.6 T = 70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) 60 A I DM Avalanche Current (Note 7) I 9 A AS Repetitive Avalanche Energy (Note 7) E 12 mJ AS Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units 0.9 T = 25C A Total Power Dissipation (Note 5) P W D T = 70C 0.5 A Steady state 145 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 74 T = 25C 2.2 A Total Power Dissipation (Note 6) W P D T = 70C 1.4 A Steady state 58 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 31 C/W Thermal Resistance, Junction to Case (Note 6) 11 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7 .UIS in production with L = 0.3mH, TJ = 25C POWERDI is a registered trademark of Diodes Incorporated 2 of 7 May 2012 DMN3024SFG Diodes Incorporated www.diodes.com Document number: DS35439 Rev. 3 - 2 ADVANCE INFORMATION

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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