X-On Electronics has gained recognition as a prominent supplier of DAGNH75600 igbt modules across the USA, India, Europe, Australia, and various other global locations. DAGNH75600 igbt modules are a product manufactured by DACO SEMICONDUCTOR. We provide cost-effective solutions for igbt modules, ensuring timely deliveries around the world.

DAGNH75600

DAGNH75600 electronic component of DACO SEMICONDUCTOR
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See Product Specifications
Part No.DAGNH75600
Manufacturer: DACO SEMICONDUCTOR
Category:IGBT Modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:75A
Datasheet: DAGNH75600 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 40.1487 ea
Line Total: USD 40.15

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 41.384

     
Manufacturer
Product Category
Power Dissipation
Case
Semiconductor Structure
Topology
Electrical Mounting
Mounting
Technology
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
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We proudly offer the DAGNH75600 IGBT Modules at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the DAGNH75600 IGBT Modules.

DACO SEMICONDUCTOR's DAGNH75600 is an insulated-gate bipolar transistor (IGBT) half-bridge module designed for use in high power applications. It has a maximum output current of 75A, a collector-emitter voltage of 600 volts, and a total on-state resistance of 5.2 milliohms. The device is capable of high frequency switching with a fast switching time of 17000V/µs. It also features reverse current blocking and low power dissipation in the form of low junction temperature and on-state losses. The IGBT module is designed to deliver reliable operation and efficiency in various power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DACO SEMICONDUCTOR
DACO SEMICONDUCTOR CO

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