Product Information

D3S099N65B-U

D3S099N65B-U electronic component of D3 Engineering

Datasheet
MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220
Manufacturer: D3 Engineering
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.8015 ea
Line Total: USD 4.8

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

D3S099N65B-U
D3 Engineering

1000 : USD 1.9041
2500 : USD 1.8101
5000 : USD 1.7631

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

D3S099N65 650V, 99m, 33.6 A Super Junction Power MOSFET Ordering Information Part Number Package Option D3S099N65B-U TO-220 D3S099N65D-U TO-247 D3S099N65E-T TO-263 TO-220 TO-263 TO-247 TO-220 FullPak D3S099N65F-U TO-220 FullPak Device Schematic Description Drain (Pin 2, Tab) TM +FET is an advanced Super Junction Power MOSFET offering excellent efficiency through low Rds-ON and low gate charge. Gate TM +FET is a rugged device with precision charge balance (Pin 1) implementation designed for demanding uses such as enterprise Source (Pin 3) power computing power supplies, motor control, lighting and other challenging power conversion applications. Features Benefits LOW R DS(ON) LOW CONDUCTION LOSSES FAST SWITCHING HIGH EFFICIENCY HIGH E AS REL TEST SPEC: JESD-22 EXCELLENT AVALANCHE PERFORMANCE LOW OUTPUT CAPACITANCE Table 1 Key Performance Parameters Applications Parameters Value Unit POWER FACTOR CORRECTION V T 710 V DS J max SERVER POWER SUPPLIES RDS(on),max <99 m TELECOM POWER SUPPLIES 56 nC Q ,typ g INVERTERS I 33.6 A D 25C MOTOR CONTROL Coss 72 pf Copyright D3 Semiconductor. All rights reserved. Jan. 2019. Rev. 3.0 1/17 D3S099N65B Table of contents Description-------------------------------------------------------------------------------------------------1 Maximum ratings-----------------------------------------------------------------------------------------3 Thermal characteristics---------------------------------------------------------------------------------3 Electrical characteristic---------------------------------------------------------------------------------4 Electrical characteristics diagrams------------------------------------------------------------------6 Test Circuit & Waveform------------------------------------------------------------------------------11 Revision---------------------------------------------------------------------------------------------------17 Copyright D3 Semiconductor. All rights reserved. Jan. 2019. Rev. 3.0 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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