Product Information

MTNK6N3

MTNK6N3 electronic component of CYSTECH

Datasheet
MOSFET N Trench 60V 350mA 2.5V @ 250uA 2 Ω @ 500mA,10V SOT-23 RoHS

Manufacturer: CYSTECH
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0404 ea
Line Total: USD 0.81

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20

Stock Image

MTNK6N3
CYSTECH

20 : USD 0.0404
200 : USD 0.0304
600 : USD 0.0285
2000 : USD 0.0267
10000 : USD 0.0259
20000 : USD 0.0255

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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The MTNK6N3 with MOSFET N Trench 60V 350mA 2.5V @ 250uA 2Ω @ 500mA,10V SOT-23 RoHS manufactured by CYSTECH is a surface-mounted transistor. It is a single N-Channel enhancement mode field-effect transistor that is designed to handle up to 350mA in a compact SOT-23 package. The maximum voltage rating is 60V, making it suitable for a wide range of power applications. It has a 2.5V threshold and a maximum gate-source voltage of 10V, allowing for efficient energy transfer. It can handle up to 500mA of drain current at 2Ω and provide 250uA of gate current at 2.5V. All parts have passed RoHS environmental tests, making them safe and reliable.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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