General Purpose Transistor MMBT3904-HF (NPN) RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -Epitaxial planar die construction 3 -As complementary type, the PNP 0.055(1.40) 0.047(1.20) transistor MMBT3904-HF is recommended 1 2 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10) max 0.020(0.50) 0.005(0.20) min 0.012(0.30) 2 Dimensions in inches and (millimeter) Emitter Maximum Ratings (at TA=25C unless otherwise noted) Unit Symbol Typ Max Parameter Min Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6 V Collector current-Continuous IC 0.2 A Collector dissipation PC 0.2 W O Thermal resistance, junction to ambient R JA 625 C/W O Storage temperature and junction temperature TSTG, TJ -55 +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Min Parameter Conditions Max Unit Collector-Base breakdown voltage IC =100 A , IE=0 V(BR)CBO V 60 Collector-Emitter breakdown voltage V(BR)CEO IC =1mA , IB=0 40 V Emitter-Base breakdown voltage IE =100 A , IC=0 V(BR)EBO 6 V VCB=60V , IE=0 Collector cut-off current ICBO 0.1 A VCE=30V , VBE(off)=3V 50 Collector cut-off current ICEX nA VEB=5V , IC=0 Emitter cut-off current IEBO 0.1 A VCE=1V , IC=10mA hFE(1) 100 400 DC current gain 60 VCE=1V , IC=50mA hFE(2) 0.3 Collector-Emitter saturation voltage IC=50mA , IB=5mA VCE(sat) V 0.95 Base-Emitter saturation voltage VBE(sat) V IC=50mA , IB=5mA VCE=20V , IC=10mA 300 Transition frequency fT Mhz f=100MHZ Delay time VCC=3.0V , VBE=-0.5V td 35 nS IC=10mA , IB1=1.0mA Rise time tr 35 nS Storage time VCC=3.0V , IC=10mA ts 200 nS Fall time IB1=IB2=1.0mA tf 50 nS REV:A QW-JTR02 Page 1 Comchip Technology CO., LTD.General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3904-HF) Fig.2 Collector-Emitter saturation Fig.1 Typical pulsed current gain voltage V.S. Collector current V.S. Collector current 500 VCE=5V =10 0.15 400 oooo 125C125C125C125C 300 o 125C 0.10 o ooo 25C125C125C125C o 25C 200 0.05 oooo 100 -40C125C125C125C o -40C 0 0.1 1 10 100 0.1 1 10 100 Ic- Collector current (mA) Ic- Collector current (mA) Fig.4 Base-Emitter ON voltage Fig.3 Base-Emitter saturatioin V.S. Collector current voltage V.S. Collector current 1 VCE=5V 1 =10 oooo -40C125C125C125C 0.8 o -40C oooo 125C125C125C 25C 0.8 0.6 oooo 125C125C125C125C o 25C 0.6 o 0.4 125C 0.4 0.2 0.1 1 10 100 0.1 1 10 100 Ic - Collector current (mA) Ic - Collector current (mA) Fig.6 Capacitance V.S. Reverse Fig.5 Collector-cutoff current V.S. bias voltage Ambient temperature 500 10 f=1.0MHz VCB=30V 100 5 10 4 1 3 Cibo 2 0.1 Cobo 1 25 50 75 100 125 150 0.1 1 10 100 o TA- Ambient temperature (C) Reverse bias voltage (V) REV:A QW-JTR02 Page 2 Comchip Technology CO., LTD. VBE(sat) - Base-emitter votla ge (V ) VBE(ON)- Base-emitterv oltage (V ) ICBO- Collector current (nA) hFE- Typical pulsed current gain VCE(sat)- Collector-Emitter voltage(V) Capacitance (pF)