Product Information

CTAN1424V-G

CTAN1424V-G electronic component of Comchip

Datasheet
ESD Suppressors / TVS Diodes 300W Bidirectional 24V TVS Array

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

CTAN1424V-G
Comchip

1 : USD 2.5326
10 : USD 0.8618
100 : USD 0.6545
500 : USD 0.5853
1000 : USD 0.4817
2500 : USD 0.4493
10000 : USD 0.4428
25000 : USD 0.4288
50000 : USD 0.4158
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Type
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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300W Transient Voltage Suppressor CT Series -G RoHS Device Features -(16kV) IEC 61000-4-2 rating. -8/20 S transient rated. -Six working voltages (3.3, 5, 12, 24). Applications -Transient / ESD suppression. -LAN/WAN. -Peripherals. -Set-Top Boxes. Circuit Schematic 1 1 1 CTA 14 pin CTD 6 pin 3 pin CTE SOIC SOT23-6 SOT-23 Application Schematic Bidirectional Unidirectional Gnd Gnd Transceiver Transceiver Vp (Transient) Connector Connector V clamp 0V REV:C QW-BTV12 Page 1 Comchip Technology CO., LTD.300W Transient Voltage Suppressor Maximum Ratings and Electrical Characteristics Specifications: (Ta=25C) Rating Symbol Value Units Peak pulse power (8/20 S) 300 Watts PPK Operating Temp. range TJ -55 to +125 C C Soldering temperature 260 (10sec) TL C 3.3V Volt Characteristics (3V3) Symbol Characteristics Min Max Units Test Conditions VBD Reverse breakdown voltage 4.0 V IF=1mA IL Reverse leakage current 50 A VBD=3.3V CT Capacitance 350 pF 1MHz VC Channel clamp voltage 8 V 8/20 S, 1A IPP Peak pulse current 17 A 8/20 S 5V Volt Characteristics (5V0) Symbol Characteristics Min Max Units Test Conditions VBD Reverse breakdown voltage 6.0 V IF=1mA IL Reverse leakage current 10 A VBD=5V CT Capacitance 350 pF 1MHz VC Channel clamp voltage 10 V 8/20 S, 1A IPP Peak pulse current 17 A 8/20 S 12V Volt Characteristics (12V) Symbol Characteristics Min Max Units Test Conditions VBD Reverse breakdown voltage 13.3 V IF=1mA IL Reverse leakage current 1 A VBD=12V CT Capacitance 120 pF 1MHz VC Channel clamp voltage 20 V 8/20 S, 1A IPP Peak pulse current 12 A 8/20 S 24V Volt Characteristics (24V) Symbol Characteristics Min Max Units Test Conditions VBD Reverse breakdown voltage 26.7 V IF=1mA IL Reverse leakage current 1 A VBD=24V CT Capacitance 50 pF 1MHz VC Channel clamp voltage 43 V 8/20 S, 1A IPP Peak pulse current 5 A 8/20 S Ordering Information: CTA N14 24V -G Type Package Code Voltage RoHS compliant CTA From table below 3 V3 CTD 5V0 CTE 12V 24V REV:C QW-BTV12 Page 2 Comchip Technology CO., LTD.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

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