Product Information

CDSW21-G

CDSW21-G electronic component of Comchip

Datasheet
Diodes - General Purpose, Power, Switching VR=200V, IF=200mA
Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4638 ea
Line Total: USD 0.46

1912 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
161 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

CDSW21-G
Comchip

1 : USD 0.3335
10 : USD 0.23
100 : USD 0.1127
1000 : USD 0.0655
3000 : USD 0.0517
9000 : USD 0.0425
45000 : USD 0.0379
99000 : USD 0.0322

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

SMD Switching Diode CDSW19-G/20-G/21-G High Speed RoHS Device SOD-123 Features 0.152(3.85) 0.140(3.55) -Fast Switching Speed -Surface Mount Package Ideally Suited for Automatic Insertion 0.026(0.65) 0.067(1.70) 0.059(1.50) 0.018(0.45) -For General Purpose Switching Applications 0.110(2.80) 0.102(2.60) Mechanical data -Case: SOD-123, Molded Plastic -Terminals: Solderable per MIL-STD-202, Method 0.049(1.25) 0.006 (0.15) 0.041(1.05) 208 0.003 (0.08) -Weight: 0.01 gram(approx.). 0.004(0.10) Max. 0.020 (0.50) REF Dimensions in inches and (millimeter) Maximum Rating (at Ta=25C unless otherwise noted) Symbol Parameter CDSW19-G CDSW20-G CDSW21-G Unit Non-Repetitive peak reverse voltage VRM 120 200 250 V Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 100 150 200 V DC blocking voltage VR VR(RMS) RMS reverse voltage 141 V 71 106 Forward continuous current IFM 400 mA Average rectified output current Io 200 mA 2.5 Peak forward surge current 1.0mS IFSM A 0.5 1.0S Repetitive peak forward current IFRM 625 mA Power dissipation PD 250 mW R JA C/W Thermal Resistance (Junction to ambient) 500 Storage temperature TSTG -65 ~ +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Typ Parameter Conditions Symbol Min Max Unit IF = 0.1 A 1.0 Forward voltage VF V IF = 0.2 A 1.25 CDSW19-G VR=100 V 0.1 Reverse current CDSW20-G VR=150 V IR 0.1 uA CDSW21-G VR=200 V 0.1 Capacitance between terminals f = 1 MHZ, VR=0V CT 5 PF Reverse recovery time IF = IR=30 mA, RL =100 , Irr = 0.1 X IR tRR 50 nS REV:C QW-B0018 Page 1SMD Switching Diode Typical Characteristics (CDSW19-G/20-G/21-G) Fig.1 - Forward Characteristics Fig.2 - Typical Reverse Characteristics 1 100 O TA=150 C O TA=125 C 10 OO 0.1 TTAA=75=75 CC 1 OO 0.1 TTAA=25=25 CC OO TTAA=25=25 CC OO OO 0.01 TTAA=75=75 CC TTAA=0=0 CC 0.01 OO TTAA=75=-40 CC O TA=125 C O OO OO TA=150 C TTAA=-40=75 CC TTAA=0=0 CC 0.001 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 VF, Instantaneous Forward Voltage (V) VR, Instantaneous Reverse Voltage (V) Fig.4 - Typical Capacitance V.S. Fig.3 - Power Derating Curve Reverse Voltage 4.0 300 3.5 250 3.0 200 2.5 150 2.0 1.5 100 1.0 50 0.5 0 0 0 25 50 75 100 125 150 0 10 20 30 40 TA, Ambient Temperature (C) VR, Reverse Voltage (V) REV:C QW-B0018 Page 2 PD, Power Dissipation, (mW) IF, Instantaneous Forward Curren t (A) CT, Total Capaci tance p( F) IR,I ns tantane ous Reve rse Cur rent (A )

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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