Product Information

CDBF00340-HF

CDBF00340-HF electronic component of Comchip

Datasheet
Schottky Diodes & Rectifiers VR=40V, IO=30mA
Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 4000
Multiples : 1

Stock Image

CDBF00340-HF
Comchip

4000 : USD 0.0836
5000 : USD 0.0828
6000 : USD 0.0819
10000 : USD 0.0811
12000 : USD 0.0803
20000 : USD 0.0794
25000 : USD 0.0786
30000 : USD 0.0779
50000 : USD 0.0771
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

CDBF00340-HF
Comchip

1 : USD 1.2555
10 : USD 0.7106
100 : USD 0.1414
1000 : USD 0.0941
4000 : USD 0.0705
N/A

Obsolete
0 - WHS 3

MOQ : 4000
Multiples : 4000

Stock Image

CDBF00340-HF
Comchip

4000 : USD 0.1529
N/A

Obsolete
0 - WHS 4

MOQ : 121
Multiples : 1

Stock Image

CDBF00340-HF
Comchip

121 : USD 0.0995
250 : USD 0.0944
500 : USD 0.0926
N/A

Obsolete

Read More Specifications

     
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Product Category
RoHS - XON
Icon ROHS
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Additional Infomation About Product

SMD Schottky Barrier Diode CDBF00340-HF Io = 30 mA VR = 40 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102(2.60) 0.095(2.40) -Designed for mounting on small surface. -Extremely thin package. 0.051(1.30) 0.043(1.10) -Low stored charge. -Majority carrier conduction. Mechanical data 0.035(0.90) 0.027(0.70) -Case: 1005/SOD-323F standard package, 0.020(0.50) Typ. molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.012 (0.30) Typ. -Marking Code: Cathode band & B2 0.040(1.00) Typ. -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 0.006 gram(approx.). O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Repetitive peak reverse voltage VRRM 45 V Reverse voltage VR 40 V Average forward current IO 30 mA 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 500 mA on rate load(JEDEC method) Power Dissipation PD 200 mW O Sunction temperature TSTG -40 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Symbol Parameter Conditions Min Max Unit Forward voltage IF = 1 mA DC VF 0.37 V VR = 30V 0.50 Reverse current IR uA VR = 40V 1.00 Capacitance between terimnals F = 1 MHZ and 1 VDC reverse voltage CT 1.5 pF REV:A QW-G1004 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBF00340-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 100m 100u O 125 C 10m 10u O 75 C 1m 1u O 25 C 100n 100u 10n O -25 C 1n 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 40 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 10 Mounting on glass epoxy PCBs f = 1 MHz 100 Ta = 25 C 80 1 60 40 20 0 0.1 0 5 10 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1004 Page 2 Comchip Technology CO., LTD. 15 O 25 C O 125 C O -25 C O 75 C Capacitance between terminals (PF) Forward current (A ) Average forward current(%) Reverse current ( A )

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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