Product Information

ACPDQC5V0C-HF

ACPDQC5V0C-HF electronic component of Comchip

Datasheet
ESD Suppressors / TVS Diodes 5V AUTOMOTIVE GRADE BIDIRECTION AEC-Q101

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0159 ea
Line Total: USD 0.02

3 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.0116

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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SMD ESD Protection Diode ACPDQC5V0C-HF RoHS Device Halogen Free Features 0402C/SOD-923F - Bi-directional ESD protection. 0.041(1.05) - IEC61000-4-2 Level 4 ESD protection. 0.037(0.95) - Surface mount package. 0.026(0.65) - Ultra small SMD package:0402. 0.022(0.55) - Comply with AEC-Q101 Mechanical data 0.022(0.55) - Case: 0402C/SOD-923F standard package, 0.018(0.45) molded plastic. 0.012(0.30) 0.001(0.02) 0.008(0.20) Max. - Terminals: Matte tin plated, solderable per MIL-STD-750, method 2026. - Mounting position: Any. - Weight: 0.001 grams(approx.). 0.022(0.55) 0.018(0.45) Circuit diagram Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-Off voltage VRWM 5 V Diode breakdown voltage IR = 1mA VBD 6.1 7.0 V Leakage current VR = 5V IL 0.1 2.0 uA Junction capacitance VR =0V,f =1MHz pF CT 25 30 IEC 61000-4-2(air) ESD 16 kV ESD capability IEC 61000-4-2(contact) ESD 8 kV IPP = 1 A, tp=8/20us Vc 10 V Clamping Voltage IPP = 4 A, tp=8/20us Vc 17 V Peak Pulse Power TP=8/20us PPP 68 W Operation temperature Tj -55 125 C Storage temperature TSTG -55 150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-G7004 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES ( ACPDQC5V0C-HF ) Fig.1 - 8/20us Peak Pulse Current Fig.2 - Typical Capacitance Between Waveform Acc. IEC 61000-4-5 Terminals Characteristics 120% 30 Ta=25C Test Waveform parameters tf=8us Peak Valur Ipp td=20us 100% 25 -t 80% e 20 60% 15 40% td= t Ipp / 2 10 20% 0% 5 0 5 10 15 20 25 30 0 1 2 3 4 5 Time, (us) Reverse Voltage, (V) Fig.4 - Clamping Voltage Vs. Fig.1 - Reverse Characteristics Peak Pulse Current 10u 18 15 1u 12 9 100n 6 Waveform 3 Parameters: tr=8us td=20us 10n 0 0 20 40 60 80 100 1 2 3 4 5 Reverse Voltage, (%) Peak Pulse Current, (A) Fig.4 - Power Rating Derating Curve Mounting on glass epoxy PCBs 100 80 60 40 20 0 0 25 50 75 100 125 150 Peak Pulse Current, (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-G7004 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Reverse Current, ( A ) Power rating, (%) Clamping voltage, (V) Capacitance Between Terminals, (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

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