Product Information

SS8550-G

Product Image X-ON

Datasheet
Transistors (NPN/PNP) PNP 1.5A 25V SOT-23 (SOT-23-3) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.0306

38560 - Global Stock
Ships to you between
Fri. 01 Oct to Wed. 06 Oct
MOQ: 20 Multiples:20
Pack Size :   20
Availability Price Quantity
38560 - Global Stock


Ships to you between
Fri. 01 Oct to Wed. 06 Oct

MOQ : 20
Multiples : 20

Stock Image

SS8550-G
Changjiang

20 : $ 0.0518
200 : $ 0.0392
600 : $ 0.037
2000 : $ 0.0345
10000 : $ 0.0335
20000 : $ 0.0331

     
Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SOT - 23 (SOT - 23 - 3)
Brand Category
Changjiang
Transistor Type
Pnp
Current - Collector Ic Max
1.5 A
Voltage - Collector Emitter Breakdown Max
25 V
Power - Max
300 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (T =25 unless otherwise noted) a 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO Collector Current -1.5 A I C P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =-100A, I =0 -40 V Collector-base breakdown voltage (BR)CBO C E V I =-0.1mA, I =0 -25 V Collector-emitter breakdown voltage (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current I V =-40V, I =0 -100 nA CBO CB E Collector cut-off current I V =-20V, I =0 -100 nA CEO CE B Emitter cut-off current I V =-5V, I =0 -100 nA EBO EB C h V =-1V, I =-100mA 120 400 FE(1) CE C DC current gain h V =-1V, I =-800mA 40 FE(2) CE C Collector-emitter saturation voltage V I =-800mA, I =-80mA -0.5 V CE(sat) C B V I =-800mA, I =-80mA -1.2 V Base-emitter saturation voltage BE(sat) C B V V =-1V, I =-10mA -1 V Base-emitter voltage BE CE C f V =-10V,I =-50mA , f=30MHz 100 MHz Transition frequency T CE C Collector output capacitance C V =-10V, I =0, f=1MHz 20 pF ob CB E CLASSIFICATION OF h FE(1) RANK L H J RANGE 120200 200350 300400 MARKING Y2 www.cj-elec.comwww.cj-elec.com 1 C,Nov,2015A,Jun,2014Typical Characteristics Static Characteristic h I FE C 500 -180 1mA -160 0.9mA Ta=100 0.8mA -140 Ta=25 -120 0.7mA 100 0.6mA -100 0.5mA -80 0.4mA -60 0.3mA -40 0.2mA -20 I =0.1mA B V =-1V CE -0 10 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.1 -1 -10 -100 -1000 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I BEsat C CEsat C -1000 -1000 -900 -800 Ta=25 -100 -700 Ta=100 -600 Ta=25 Ta=100 -500 -10 -400 -300 =10 =10 -200 -1 -0.1 -1 -10 -100 -1000 0.2 -1 -10 -100 -1000 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C V I C / C V / V BE C ob ib CB EB -1000 100 f=1MHz I =0/ I =0 E C C ib o Ta=25 C -100 C ob o Ta=100 C Ta=25 -10 -1 VCE=-1V -0.1 1 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.2 -1 -10 20 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (mV) BE I Pc Ta fT C 500 350 300 250 100 200 150 100 50 VCE-10V o Ta=25 C 10 0 -1 -10 -100 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE Ta () C www.cj-elec.comwww.cj-elec.com 2 C,Nov,2015A,Jun,2014 BASE-EMITTER SATURATION COLLCETOR CURRENT I (mA) VOLTAGE V (mV) TRANSITION FREQUENCY fT (MHz) C BEsat COLLECTOR CURRENT I (mA) C COLLECTOR POWER DISSIPATION COLLECTOR-EMITTER SATURATION CAPACITANCE C (pF) VOLTAGE V (mV) Pc (mW) DC CURRENT GAIN h CEsat FE

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Changjiang may also be referenced as

CJT(Changjiang Connectors)
Changjiang Connectors
Changjiang Electronics Tech (CJ)
CJT(Changjiang Connectors)