Product Information

CMXT3906 TR

CMXT3906 TR electronic component of Central Semiconductor

Datasheet
CMXT3906 Series 40 V 0.2 A Surface Mount Dual PNP Transistor - SOT-26

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6667 ea
Line Total: USD 0.67

382 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20608 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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CMXT3906 TR
Central Semiconductor

1 : USD 0.4492
10 : USD 0.3852
100 : USD 0.2717
500 : USD 0.2173
1000 : USD 0.1823
3000 : USD 0.1582
9000 : USD 0.157
24000 : USD 0.1546
45000 : USD 0.1509

     
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RoHS - XON
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CMXT3906 www.centralsemi.com SURFACE MOUNT DUAL PNP DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CMXT3906 type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, and designed for small signal general purpose amplifier and switching applications. MARKING CODE: X2A SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =30V, V=3.0V 50 nA CEV CE EB BV I=10A 40 V CBO C BV I=1.0mA 40 V CEO C BV I=10A 5.0 V EBO E V I =10mA, I=1.0mA 0.25 V CE(SAT) C B V I =50mA, I=5.0mA 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 60 FE CE C h V =1.0V, I=1.0mA 80 FE CE C h V =1.0V, I=10mA 100 300 FE CE C h V =1.0V, I=50mA 60 FE CE C h V =1.0V, I=100mA 30 FE CE C f V =20V, I =10mA, f=100MHz 250 MHz T CE C C V =5.0V, I =0, f=1.0MHz 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 2.0 12 k ie CE C R3 (12-February 2010)CMXT3906 SURFACE MOUNT DUAL PNP SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS -4 h V =10V, I =1.0mA, f=1.0kHz 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 3.0 60 S oe CE C NF V =5.0V, I =100A, R=1.0k, CE C S f=10Hz to 15.7kHz 4.0 dB t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns d CC BE C B1 t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 75 ns f CC C B1 B2 SOT-26 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X2A R3 (12-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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