Product Information

CMPT6517 TR

CMPT6517 TR electronic component of Central Semiconductor

Datasheet
Central Semiconductor Bipolar Transistors - BJT Complementary HV 350Vcbo 350Vceo

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5022 ea
Line Total: USD 0.5

48758 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
36716 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

CMPT6517 TR
Central Semiconductor

1 : USD 0.4278
10 : USD 0.3335
100 : USD 0.1874
1000 : USD 0.1357
3000 : USD 0.1196
9000 : USD 0.1104
24000 : USD 0.1104
45000 : USD 0.1081
99000 : USD 0.1046

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMPT6517 NPN CMPT6520 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMPT6517 and SILICON TRANSISTORS CMPT6520 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications. MARKING CODES: CMPT6517: C1Z CMPT6520: C2Z SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 350 V CBO Collector-Emitter Voltage V 350 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Continuous Base Current I 250 mA B Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=250V 50 nA CBO CB I V =5.0V (CMPT6517) 50 nA EBO EB I V =4.0V (CMPT6520) 50 nA EBO EB BV I=100A 350 V CBO C BV I=1.0mA 350 V CEO C BV I =10A (CMPT6517) 6.0 V EBO E BV I =10A (CMPT6520) 5.0 V EBO E V I =10mA, I=1.0mA 0.30 V CE(SAT) C B V I =20mA, I=2.0mA 0.35 V CE(SAT) C B V I =30mA, I=3.0mA 0.50 V CE(SAT) C B V I =50mA, I=5.0mA 1.0 V CE(SAT) C B V I =10mA, I=1.0mA 0.75 V BE(SAT) C B V I =20mA, I=2.0mA 0.85 V BE(SAT) C B V I =30mA, I=3.0mA 0.90 V BE(SAT) C B V I =10V, I =100mA 2.0 V BE(ON) C C h V =10V, I=1.0mA 20 FE CE C h V =10V, I =10mA FE CE C 30 R5 (1-February 2010)CMPT6517 NPN CMPT6520 PNP SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I=30mA 30 200 FE CE C h V =10V, I=50mA 20 200 FE CE C h V =10V, I=100mA 15 FE CE C f V =20V, I =10mA, f=20MHz 40 200 MHz T CE C C V =20V, I =0, f=1.0MHz 6.0 pF cb CE C C V =0.5V, I =0, f=1.0MHz (CMPT6517) 80 pF eb EB E C V =0.5V, I =0, f=1.0MHz (CMPT6520) 100 pF eb EB E SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT6517: C1Z CMPT6520: C2Z R5 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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