CMNDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMNDM8001 is SILICON MOSFET a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low r and DS(ON) Low Threshold Voltage. MARKING CODE: BC FEATURES: SOT-953 CASE Low 0.5mm Package Profile Device is Halogen Free by design Low r DS(ON) APPLICATIONS: Low Threshold Voltage Load/Power Switches Logic Level Compatible Power Supply Converter Circuits Small, FEMTOmini 1.0 x 0.8mm, SOT-953 Battery Powered Portable Equipment Surface Mount Package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 10 V GS Continuous Drain Current (Steady State) I 100 mA D Continuous Drain Current I 200 mA D Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =10V, V=0 1.0 A GSSF GSSR GS DS I V =20V, V=0 1.0 A DSS DS GS BV V =0, I=100A 20 V DSS GS D V V =V , I=250A 0.6 1.1 V GS(th) DS GS D r V =4.0V, I=10mA 1.9 8.0 DS(ON) GS D r V =2.5V, I=10mA 2.4 12 DS(ON) GS D r V =1.5V, I=1.0mA 45 DS(ON) GS D Q V =10V, V =4.5V, I=100mA 0.658 nC g(tot) DS GS D Q V =10V, V =4.5V, I=100mA 0.158 nC gs DS GS D Q V =10V, V =4.5V, I=100mA 0.181 nC gd DS GS D g V =10V, I=100mA 100 mS FS DS D C V =3.0V, V =0, f=1.0MHz 15 pF rss DS GS C V =3.0V, V =0, f=1.0MHz 45 pF iss DS GS C V =3.0V, V =0, f=1.0MHz 15 pF oss DS GS t V =3.0V, V =2.5V, I =10mA 35 ns on DD GS D t V =3.0V, V =2.5V, I=10mA 80 ns off DD GS D R3 (22-August 2011)CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-953 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Drain 4) Source 5) Gate MARKING CODE: BC R3 (22-August 2011) www.centralsemi.com