CMKT2207 www.centralsemi.com SURFACE MOUNT COMPLEMENTARY SILICON DESCRIPTION: TRANSISTORS The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individually isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general purpose and switching applications. MARKING CODE: K70 SOT-363 CASE MAXIMUM RATINGS: (T =25C) SYMBOL NPN (Q1) PNP (Q2) UNITS A Collector-Base Voltage V 75 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=60V - 10 - - nA CBO CB I V=50V - - - 10 nA CBO CB I V =60V, T=125C - 10 - - nA CBO CB A I V =50V, T=125C - - - 10 nA CBO CB A I V=3.0V - 10 - - nA EBO EB I V =60V, V =3.0V - 10 - - nA CEV CE EB(OFF) I V =30V, V =500mV - - - 50 nA CEV CE EB(OFF) BV I=10A 75 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.3 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.0 - 1.6 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.2 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.0 - 2.6 V BE(SAT) C B h V =10V, I=0.1mA 35 - 75 - FE CE C h V =10V, I=1.0mA 50 - 100 - FE CE C h V =10V, I=10mA 75 - 100 - FE CE C h V =10V, I=150mA 100 300 100 300 FE CE C h V =1.0V, I=150mA 50 - - - FE CE C h V =10V, I=500mA 40 - 50 - FE CE C f V =20V, I =20mA, f=100MHz 300 - - - MHz T CE C f V =20V, I =50mA, f=100MHz - - 200 - MHz T CE C C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 25 - - pF ib EB C R4 (13-January 2010)CMKT2207 SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS C V =2.0V, I =0, f=1.0MHz - - - 30 pF ib EB C h V =10V, I =1.0mA, f=1.0kHz 2.0 8.0 - - k ie CE C h V =10V, I =10mA, f=1.0kHz 0.25 1.25 - - k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz - 8.0 - - x10 re CE C -4 h V =10V, I =10mA, f=1.0kHz - 4.0 - - x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 50 300 - - fe CE C h V =10V, I =10mA, f=1.0kHz 75 375 - - fe CE C h V =10V, I =1.0mA, f=1.0kHz 5.0 35 - - S oe CE C h V =10V, I =10mA, f=1.0kHz 25 200 - - S oe CE C rbC V =10V, I =20mA, f=31.8MHz - 150 - - ps c CB E NF V =10V, I =100A, R =1.0k, f=1.0kHz - 4.0 - - dB CE C S t V =30V, V =0.5V, I =150mA, I=15mA - - - 45 ns on CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA - 10 - 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA - 25 - 40 ns r CC BE C B1 t V =6.0V, I =150mA, I =I=15mA - - - 100 ns off CC C B1 B2 t V =30V, I =150mA, I =I=15mA - 225 - - ns s CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA - - - 80 ns s CC C B1 B2 t V =30V, I =150mA, I =I=15mA - 60 - - ns f CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA - - - 30 ns f CC C B1 B2 SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: K70 R4 (13-January 2010) www.centralsemi.com