Product Information

2N3583

2N3583 electronic component of Central Semiconductor

Datasheet
Transistors Bipolar - BJT NPN High Power
Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

90: USD 13.2179 ea
Line Total: USD 1189.61

0 - Global Stock
MOQ: 90  Multiples: 90
Pack Size: 90

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 90
Multiples : 90

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2N3583
Central Semiconductor

90 : USD 13.2179
120 : USD 11.8246

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

2N3583 2N3584 2N3585 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N3583 series NPN TRANSISTORS devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N3583 2N3584 2N3585 UNITS C Collector-Base Voltage V 250 375 500 V CBO Collector-Emitter Voltage V 175 250 300 V CEO Emitter-Base Voltage V 6.0 6.0 6.0 V EBO Continuous Collector Current I 1.0 2.0 2.0 A C Peak Collector Current I 5.0 A CM Continuous Base Current I 1.0 A B Power Dissipation P 35 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 5.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N3583 2N3584 2N3585 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V =225V, V =1.5V - 1.0 - - - - mA CEV CE EB I V =340V, V =1.5V - - - 1.0 - - mA CEV CE EB I V =450V, V =1.5V - - - - - 1.0 mA CEV CE EB I V =225V, V =1.5V, T=150C - 3.0 - - - - mA CEV CE EB C I V =300V, V =1.5V, T=150C - - - 3.0 - 3.0 mA CEV CE EB C I V =150V - 10 - 5.0 - 5.0 mA CEO CE I V =6.0V - 5.0 - 0.5 - 0.5 mA EBO BE BV I=200mA 175 - 250 - 300 - V CEO C V I =1.0A, I=125mA - 5.0 - 0.75 - 0.75 V CE(SAT) C B V I =1.0A, I=100mA - - - 1.4 - 1.4 V BE(SAT) C B V V =10V, I=1.0A - 1.4 - 1.4 - 1.4 V BE(ON) CE C h V =10V, I=100mA 40 - 40 - 40 - FE CE C h V =10V, I=500mA 40 200 - - - - FE CE C h V =2.0V, I=1.0A - - 8.0 80 8.0 80 FE CE C h V =10V, I =1.0A 10 - 25 100 25 100 FE CE C f V =10V, I=200mA, f=5.0MHz 10 - 10 - 10 - MHz T CE C C V =10V, I=0, f=1.0MHz - 120 - 120 - 120 pF ob CB E h V =30V, I=100mA, f=1.0kHz 25 350 - - - - fe CE C t V =200V, I =1.0A, I =100mA, R=200 - - - 3.0 - 3.0 s r CC C B1 L t V =200V, I =1.0A, I =I =100mA - - - 4.0 - 4.0 s s CC C B1 B2 t V =200V, I =1.0A, I =I =100mA - - - 3.0 - 3.0 s f CC C B1 B2 I V =100V 350 - 350 - 350 - mA S/b CE R3 (2-September 2014)2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (2-September 2014) www.centralsemi.com

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Central Semiconductor may also be referenced as

Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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